Laser-Assisted CMP for Copper Wafer

Taeho Ha; Keiichi Kimura; Takashi Miyoshi; Yasuhiro Takaya

doi:10.4028/www.scientific.net/MSF.502.351

Paper Titles

Manipulation Mechanisms for Micro-Assembly Technology
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In Situ X-Ray Diffraction Measurement of Electrodeposition Process in Molten Salts
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In Situ Neutron Diffraction Analysis of Phase Transformation Kinetics in TRIP Steel
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Internal Friction Influenced by Hydrogen in Super Duplex Stainless Steels
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Laser-Assisted CMP for Copper Wafer
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Development of Technology for Reduction Process of Copper Production
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Fabrication of Lotus-Type Porous Metals, Intermetallic Compounds and Semiconductors
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Study on Morph-Genetic Materials Derived from Natural Structure
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Fabrications and Corrosion Resistance of Iron-Aluminum Alloy/High Carbon Steel Composites Prepared by Clad Rolling
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HomeMaterials Science ForumMaterials Science Forum Vol. 502Laser-Assisted CMP for Copper Wafer

Laser-Assisted CMP for Copper Wafer

Abstract:

This paper presents a laser-assisted Cu-CMP (Chemical Mechanical Polishing) method for obtaining higher planarized surface by forming laser aggregation particles on recessed areas of uneven copper surface before polishing. At first, the laser trapping of fine particles in slurry and the formation of aggregated marks on the copper wafer surface were investigated by fundamental experiments based on optical radiation pressure. Next, proposed planarization method for uneven surface of copper wafer was attempted. As the polishing processed, the height of aggregated marks was reduced. Then, it was confirmed that the aggregated marks played a role of masks, and no material removal at the bottom surface of recessed areas took place during polishing. This process made it possible to realize high planarity on copper wafer surface.

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Periodical:

Materials Science Forum (Volume 502)

Pages:

351-360

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.502.351

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Online since:

December 2005

Authors:

Taeho Ha, Keiichi Kimura, Takashi Miyoshi, Yasuhiro Takaya

Keywords:

CMP, Copper (Cu), Laser, Planarization, Wafer

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References

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[4] Y. Takaya, K. Kimura, S. Takahashi, and T. Miyoshi : Proc. JUSFA (2002), p.759 Fig. 10 Averaged cross sections of recessed area without mark during polishing Fig. 9 Averaged cross sections of recessed area without mark during polishing.

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