Ferroelectric and Dielectric Characteristics of Bi3.25La0.75Ti3O12 Thin Films Prepared by the Polymeric Precursor Method

A.Z. Simões; M.A. Ramírez; B.D. Stojanović; Z. Marinković; Elson Longo; José Arana Varela

doi:10.4028/www.scientific.net/MSF.514-516.212

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Ferroelectric and Dielectric Characteristics of Bi_3.25La_0.75Ti₃O₁₂ Thin Films Prepared by the Polymeric Precursor Method
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HomeMaterials Science ForumMaterials Science Forum Vols. 514-516Ferroelectric and Dielectric Characteristics of...

Ferroelectric and Dielectric Characteristics of Bi_3.25La_0.75Ti₃O₁₂ Thin Films Prepared by the Polymeric Precursor Method

Abstract:

The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 (LSCO) by the polymeric precursor method were investigated. Atomic force microscopy indicates that the deposited films exhibit a dense microstructure with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the plate-like grains of the BLT films.

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Materials Science Forum (Volumes 514-516)

Pages:

212-215

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.514-516.212

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May 2006

Authors:

A.Z. Simões, M.A. Ramírez, B.D. Stojanović, Z. Marinković, Elson Longo, José Arana Varela

Keywords:

Bismuth Titanate, Dielectric Property, Ferroelectric Property, Thin Film

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