Microstructure Characterization and Dielectric Properties of La4Mg3W3O18 Layered Oxide
The microstructure development and the dielectric properties of La4Mg3W3O18 layered oxide were investigated. A strong anisotropic grain growth is revealed in ceramics sintered above 1400oC. The anisotropy of the grain reflects the anisotropic character of the crystal structure. Dielectric measurements yield a relative dielectric permittivity, ε, and a temperature coefficient of the dielectric permittivity, TC ε, to be 21 and 95 ppm K-1, respectively. The positive value of TC ε is assumed to be caused by the octahedral tilting by analogy with the behaviour of other complex ordered perovskites.
Paula Maria Vilarinho
D. D. Khalyavin et al., "Microstructure Characterization and Dielectric Properties of La4Mg3W3O18 Layered Oxide ", Materials Science Forum, Vols. 514-516, pp. 255-258, 2006