Microstructure Characterization and Dielectric Properties of La4Mg3W3O18 Layered Oxide

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The microstructure development and the dielectric properties of La4Mg3W3O18 layered oxide were investigated. A strong anisotropic grain growth is revealed in ceramics sintered above 1400oC. The anisotropy of the grain reflects the anisotropic character of the crystal structure. Dielectric measurements yield a relative dielectric permittivity, ε, and a temperature coefficient of the dielectric permittivity, TC ε, to be 21 and 95 ppm K-1, respectively. The positive value of TC ε is assumed to be caused by the octahedral tilting by analogy with the behaviour of other complex ordered perovskites.

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Periodical:

Materials Science Forum (Volumes 514-516)

Edited by:

Paula Maria Vilarinho

Pages:

255-258

DOI:

10.4028/www.scientific.net/MSF.514-516.255

Citation:

D. D. Khalyavin et al., "Microstructure Characterization and Dielectric Properties of La4Mg3W3O18 Layered Oxide ", Materials Science Forum, Vols. 514-516, pp. 255-258, 2006

Online since:

May 2006

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$35.00

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