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Microstructure Characterization and Dielectric Properties of La4Mg3W3O18 Layered Oxide
Abstract:
The microstructure development and the dielectric properties of La4Mg3W3O18 layered oxide were investigated. A strong anisotropic grain growth is revealed in ceramics sintered above 1400oC. The anisotropy of the grain reflects the anisotropic character of the crystal structure. Dielectric measurements yield a relative dielectric permittivity, ε, and a temperature coefficient of the dielectric permittivity, TC ε, to be 21 and 95 ppm K-1, respectively. The positive value of TC ε is assumed to be caused by the octahedral tilting by analogy with the behaviour of other complex ordered perovskites.
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255-258
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Online since:
May 2006
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© 2006 Trans Tech Publications Ltd. All Rights Reserved
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