Stress Factors and Absolute Residual Stresses in Thin Films Determined by the Combination of Curvature and sin²ψ Methods

Klaus J. Martinschitz; Ernst Eiper; Jozef Keckes

doi:10.4028/www.scientific.net/MSF.524-525.711

Paper Titles

Grinding-Induced Residual Shear Stresses
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Evaluation of Subsurface Distribution of Residual Stress in Austenitic Stainless Steel Using Strain Scanning Method
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Residual Stress Evaluation of Ni Based Weld Metal Using Neutron Diffraction Method
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Residual Stresses and Accuracy of Pipe Preparations by Manufacture Zirconium Tubes for the Nuclear Industry
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Stress Factors and Absolute Residual Stresses in Thin Films Determined by the Combination of Curvature and sin²ψ Methods
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Effect of Surface Nano Crystallization on Tribological Properties of Stainless Steel
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Stresses Analysis on Coarse Grain Zn Film during Tensile Loading
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Scratch Test of TiCN Thin Films with Different Preferred Orientation
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Strains, Stresses and Elastic Properties in Polycrystalline Metallic Thin Films: In Situ Deformation Combined with X-Ray Diffraction and Simulation Experiments
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Stress Factors and Absolute Residual Stresses in Thin Films Determined by the Combination of Curvature and sin²ψ Methods

Abstract:

A new method is presented which allows the determination of experimental stress factors in anisotropic thin films on the basis of static diffraction measurement. The method is based on the simultaneous characterization of macroscopic stress and elastic strain in thin film using substrate curvature and sin2ψ methods, respectively. The curvature of monocrystalline substrate with known mechanical properties is determined using rocking curve measurements on substrate symmetrical reflections. The experimental stress and strain values are used to calculate stress factors for the specific film as a function sample tilt angle and reflection measured. The approach represents a relatively simple recipe to determine residual stress magnitude in thin films on the absolute scale. The procedure is demonstrated on polycrystalline Cu thin film deposited on Si(100).