Microstructure and Sintering Behavior of ZnO Thermoelectric Materials Prepared by the Pulse-Current-Sintering Method
Thermoelectric elements using environment-friendly materials with high thermoelectric conversion efficiency and of these thermoelectric elements can be increased by using a structure combining n-type and p-type semiconductors. From the above point of view, attention was directed at ZnO as a candidate n-type semiconductor material and investigations were made. As the result, a dimensionless figure of merit ZT close to 0.28 (1073K) was obtained for specimens produced by the PCS (Pulse Current Sintering) method with addition of specified quantities of TiO2, CoO, and Al2O3 to ZnO. It was found that the interstitial TiO2 in the ZnO restrains the grain growth and CoO acts onto the bond between grains.
Duk Yong Yoon, Suk-Joong L. Kang, Kwang Yong Eun and Yong-Seog Kim
N. Shikatani et al., "Microstructure and Sintering Behavior of ZnO Thermoelectric Materials Prepared by the Pulse-Current-Sintering Method", Materials Science Forum, Vols. 534-536, pp. 1541-1544, 2007