Microstructure and Sintering Behavior of ZnO Thermoelectric Materials Prepared by the Pulse-Current-Sintering Method

Noboru Shikatani; Tatsuya Misawa; Yasunori Ohtsu; Hiroharu Fujita; Yuji Kawakami; Takashi Enjoji

doi:10.4028/www.scientific.net/MSF.534-536.1541

Paper Titles

Effect of Li₂O Addition on Piezoelectric Properties of NKN-5LT Ceramics
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Elaboration of (Steel/Cemented Carbide) Multimaterial by Powder Metallurgy
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Graded Powder Composites by Freeze Drying, Electrophoretic Deposition and Sintering
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Hard, Wear Resistant Metal Surfaces for Industrial Applications through Laser Powder Deposition
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Microstructure and Sintering Behavior of ZnO Thermoelectric Materials Prepared by the Pulse-Current-Sintering Method
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NiAl Behavior at Plasma Spray Deposition
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The Effect of Hot Extrusion on the Structure and Thermoelectric Properties of Bi₂Te₃ Material
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Thermoelectric Material Design in Pseudo Binary Systems of Mg₂Si – Mg₂Ge – Mg₂Sn on the Powder Metallurgy Route
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Thermoelectric Properties of Fe-Doped CoSb₃ Prepared by Encapsulated Induction Melting and Hot Pressing
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HomeMaterials Science ForumMaterials Science Forum Vols. 534-536Microstructure and Sintering Behavior of ZnO...

Microstructure and Sintering Behavior of ZnO Thermoelectric Materials Prepared by the Pulse-Current-Sintering Method

Abstract:

Thermoelectric elements using environment-friendly materials with high thermoelectric conversion efficiency and of these thermoelectric elements can be increased by using a structure combining n-type and p-type semiconductors. From the above point of view, attention was directed at ZnO as a candidate n-type semiconductor material and investigations were made. As the result, a dimensionless figure of merit ZT close to 0.28 (1073K) was obtained for specimens produced by the PCS (Pulse Current Sintering) method with addition of specified quantities of TiO2, CoO, and Al2O3 to ZnO. It was found that the interstitial TiO2 in the ZnO restrains the grain growth and CoO acts onto the bond between grains.