The Influence of the Extreme Fluences of 8 MeV Protons on Characteristics of SiC Nuclear Detectors Produced by Al Implantation
The charge collection efficiency (ССЕ) of SiC-detectors preliminarily irradiated with 8 MeV protons at a fluence of 1014 cm-2 has been studied. Nuclear spectrometric techniques with 5.4 MeV α-particles were employed to test the detectors. The concentration of primarily created defects was estimated to be 4×1016 cm-3. A strong compensation of SiC was observed, which allowed connection of the structure in the forward mode. The experimental data obtained were processed using a simple two-parameter model of signal formation. The model makes it possible to separate the contributions of electrons and holes to the ССЕ. An additional irradiation at a fluence of 2×1014 cm-2 reduced the ССЕ value by a factor of 2 and gave rise to polarization. The latter indicates that radiation-induced centers are not only actively involved in carrier localization (with a decrease in the lifetime), but also in transformation of the electric field within the detector.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
A. M. Ivanov et al., "The Influence of the Extreme Fluences of 8 MeV Protons on Characteristics of SiC Nuclear Detectors Produced by Al Implantation", Materials Science Forum, Vols. 556-557, pp. 961-964, 2007