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Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter
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High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes
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Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter

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Abstract:

This work utilizes silicon carbide (SiC) vertical JFETs in a cascode configuration to exploit the inherent advantages of SiC and demonstrate the device under application conditions. The all-SiC cascode circuit is made up of a low-voltage normally-off vertical JFET, and high-voltage normally on vertical JFET to form a normally-off cascode switch. In this work, a half-bridge inverter was developed with SiC cascode switches for DC to AC power conversion. The inverter uses high-side and a low-side cascode switches that are Pulse Width Modulated (PWM) from a 500 V bus to produce a 60 Hz sinusoid at the output. An inductor and a capacitor were used to filter the output, while a load resistor was used to model the steady-state current of a motor.

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Silicon Carbide and Related Materials 2006 View Preview

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

979-982

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.979

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Cite this paper

Online since:

September 2007

Authors:

Ty McNutt, John Reichl, Harold Hearne, Victor Veliadis, Megan McCoy, Eric J. Stewart, Stephen Van Campen, Chris Clarke, Dave Bulgher, Dimos Katsis, Bruce Geil, Skip Scozzie

Keywords:

Cascode, High Voltage (HV), Inverter, Junction Field Effect Transistor (JFET), Normally-Off

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] R. Singh, et al: IEEE TED Vol. 49 (2002), p.2308.

Google Scholar

[2] A. Hefner, et al: IEEE IAS Annual Meeting, Seattle, Washington, October (2004).

Google Scholar

[3] K. Tone, et al: Elec. Dev. Let. Vol 24 p.463.

Google Scholar

[4] T. McNutt, et al: Vehicle Power and Prop. Conference, p.574, Chicago, IL, Sept. (2005).

Google Scholar

[5] C. Claeys, E. Simoen: Radiation Effects in Advanced Semiconductor Materials and Devices, Springer Verlag, (2002).

Google Scholar

[6] C.J. Scozzie, et al: IEEE Trans Nuclear Science, Vol. 43, p.1642.

Google Scholar

[7] R. Siergiej, A. Agarwal, R. C. Clarke, C. Brandt: United States Patent #5, 945, 701.

Google Scholar

[8] R. Siergiej, A. Agarwal, R. C. Clarke, C. Brandt: United States Patent #5, 903, 020.

Google Scholar

[9] L-S Chen, et al, US Patent #5, 807, 773.

Google Scholar

[10] T.J. Knight, et al.: Device Research Conf., Santa Barbara, CA, p.179.

Google Scholar

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