Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter

Abstract:

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This work utilizes silicon carbide (SiC) vertical JFETs in a cascode configuration to exploit the inherent advantages of SiC and demonstrate the device under application conditions. The all-SiC cascode circuit is made up of a low-voltage normally-off vertical JFET, and high-voltage normally on vertical JFET to form a normally-off cascode switch. In this work, a half-bridge inverter was developed with SiC cascode switches for DC to AC power conversion. The inverter uses high-side and a low-side cascode switches that are Pulse Width Modulated (PWM) from a 500 V bus to produce a 60 Hz sinusoid at the output. An inductor and a capacitor were used to filter the output, while a load resistor was used to model the steady-state current of a motor.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

979-982

DOI:

10.4028/www.scientific.net/MSF.556-557.979

Citation:

T. McNutt et al., "Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter", Materials Science Forum, Vols. 556-557, pp. 979-982, 2007

Online since:

September 2007

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Price:

$35.00

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