Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter
This work utilizes silicon carbide (SiC) vertical JFETs in a cascode configuration to exploit the inherent advantages of SiC and demonstrate the device under application conditions. The all-SiC cascode circuit is made up of a low-voltage normally-off vertical JFET, and high-voltage normally on vertical JFET to form a normally-off cascode switch. In this work, a half-bridge inverter was developed with SiC cascode switches for DC to AC power conversion. The inverter uses high-side and a low-side cascode switches that are Pulse Width Modulated (PWM) from a 500 V bus to produce a 60 Hz sinusoid at the output. An inductor and a capacitor were used to filter the output, while a load resistor was used to model the steady-state current of a motor.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
T. McNutt et al., "Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter", Materials Science Forum, Vols. 556-557, pp. 979-982, 2007