High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes
Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper presents circuit applications of normally-on SiC VFETs at temperatures exceeding 300°C. A DC-DC boost converter using a 4H-SiC VJFET and a SiC Schottky Diode was fabricated and operated up to 327°C. A power amplifier achieved a voltage gain of 3.88 at 27°C dropping to 3.16 at 327°C. This 20 % reduction is consistent with the fall in transconductance of the device.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
P. Bhatnagar et al., "High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes", Materials Science Forum, Vols. 556-557, pp. 987-990, 2007