High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes

Abstract:

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Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper presents circuit applications of normally-on SiC VFETs at temperatures exceeding 300°C. A DC-DC boost converter using a 4H-SiC VJFET and a SiC Schottky Diode was fabricated and operated up to 327°C. A power amplifier achieved a voltage gain of 3.88 at 27°C dropping to 3.16 at 327°C. This 20 % reduction is consistent with the fall in transconductance of the device.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

987-990

DOI:

10.4028/www.scientific.net/MSF.556-557.987

Citation:

P. Bhatnagar et al., "High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes", Materials Science Forum, Vols. 556-557, pp. 987-990, 2007

Online since:

September 2007

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Price:

$35.00

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