High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes

Praneet Bhatnagar; Nicolas G. Wright; Alton B. Horsfall; C. Mark Johnson; Michael J. Uren; Keith P. Hilton; A.G. Munday; A.J. Hydes

doi:10.4028/www.scientific.net/MSF.556-557.987

Paper Titles

Analysis of Novel Packaging Techniques for High Power Electronics in SiC
p.971

Comparison of Bipolar and Unipolar SiC Switching Devices for Very High Power Applications
p.975

Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter
p.979

Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs
p.983

High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes
p.987

High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs
p.991

Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET
p.995

Microwave p-i-n Diodes and Switches Based on 4H-SiC
p.999

New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process
p.1003

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557High Temperature Applications Of 4H-SiC Vertical...

High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes

Abstract:

Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper presents circuit applications of normally-on SiC VFETs at temperatures exceeding 300°C. A DC-DC boost converter using a 4H-SiC VJFET and a SiC Schottky Diode was fabricated and operated up to 327°C. A power amplifier achieved a voltage gain of 3.88 at 27°C dropping to 3.16 at 327°C. This 20 % reduction is consistent with the fall in transconductance of the device.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

987-990

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.987

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Online since:

September 2007

Authors:

Praneet Bhatnagar, Nicolas G. Wright, Alton B. Horsfall, C. Mark Johnson, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes

Keywords:

Boost Converter, Power Amplifier, VJFET

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References

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