High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes

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Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper presents circuit applications of normally-on SiC VFETs at temperatures exceeding 300°C. A DC-DC boost converter using a 4H-SiC VJFET and a SiC Schottky Diode was fabricated and operated up to 327°C. A power amplifier achieved a voltage gain of 3.88 at 27°C dropping to 3.16 at 327°C. This 20 % reduction is consistent with the fall in transconductance of the device.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

987-990

Citation:

P. Bhatnagar et al., "High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes", Materials Science Forum, Vols. 556-557, pp. 987-990, 2007

Online since:

September 2007

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$38.00

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DOI: https://doi.org/10.4028/0-87849-442-1.873

[6] N. Mohan T.M. Undeland, and W.P. Robbins: Power Electronics: Converter, Applications and Design (Wiley Publishers, 2002).

[7] Ramshaw R. S: Power Electronics Semiconductors Switches, (Chapman & Hall, 1993) Fig. 7. DC-DC converter operation trace observed at 27°C. 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 Duty Cycle (ton/T).

[60] [65] [70] [75] [80] [85] [90] Efficiency (Pout/Pin) 27C 227C 327C Fig. 9. Variation in efficiency as a function of duty cycle and temperature at 250 kHz. Fig. 8. DC-DC converter operation trace observed at 327°C. 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 Duty Cycle (ton/T).

[50] [55] [60] [65] [70] [75] [80] [85] [90] Efficiency (Po/Pin) 27C 227C 327C Fig. 10. Variation in efficiency as a function of duty cycle and temperature at 500 kHz. Vds Vgs.