Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET
The purpose of this paper is to present an all-SiC switched AC-DC converter using active power factor correction. The typical boost-converter approach is employed using continuous conduction mode. A SiC Schottky barrier diode performs the free-wheeling diode function, and a 600 V, 0.12 % SiC vertical junction field effect transistor performs the switching function under the control of a Fairchild ML4821 integrated circuit. The converter is operable off-line over the full universal voltage range (85-260 VAC), but it was optimized for a 400-600 W application operating at 208 VAC. Results are presented that demonstrate extremely high efficiency at a switching frequency of 500 kHz, the highest operating frequency of the ML4821.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
R. L. Kelley et al., "Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET ", Materials Science Forum, Vols. 556-557, pp. 995-998, 2007