Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET

Abstract:

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The purpose of this paper is to present an all-SiC switched AC-DC converter using active power factor correction. The typical boost-converter approach is employed using continuous conduction mode. A SiC Schottky barrier diode performs the free-wheeling diode function, and a 600 V, 0.12 % SiC vertical junction field effect transistor performs the switching function under the control of a Fairchild ML4821 integrated circuit. The converter is operable off-line over the full universal voltage range (85-260 VAC), but it was optimized for a 400-600 W application operating at 208 VAC. Results are presented that demonstrate extremely high efficiency at a switching frequency of 500 kHz, the highest operating frequency of the ML4821.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

995-998

DOI:

10.4028/www.scientific.net/MSF.556-557.995

Citation:

R. L. Kelley et al., "Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET ", Materials Science Forum, Vols. 556-557, pp. 995-998, 2007

Online since:

September 2007

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Price:

$35.00

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