Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET

Robin L. Kelley; Michael S. Mazzola; William L. Draper

doi:10.4028/www.scientific.net/MSF.556-557.995

Paper Titles

Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter
p.979

Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs
p.983

High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes
p.987

High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs
p.991

Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET
p.995

Microwave p-i-n Diodes and Switches Based on 4H-SiC
p.999

New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process
p.1003

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes
p.1007

Proposed Architecture for SiC Switches and Diodes in a Switch Mode Power Supply
p.1011

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Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET

Abstract:

The purpose of this paper is to present an all-SiC switched AC-DC converter using active power factor correction. The typical boost-converter approach is employed using continuous conduction mode. A SiC Schottky barrier diode performs the free-wheeling diode function, and a 600 V, 0.12 % SiC vertical junction field effect transistor performs the switching function under the control of a Fairchild ML4821 integrated circuit. The converter is operable off-line over the full universal voltage range (85-260 VAC), but it was optimized for a 400-600 W application operating at 208 VAC. Results are presented that demonstrate extremely high efficiency at a switching frequency of 500 kHz, the highest operating frequency of the ML4821.