Effect of Reducing Thickness of TiN Buffer Layers on Epitaxial Growth of GaN Layes

Kazuhiro Ito; Yu Uchida; Sang Jin Lee; Susumu Tsukimoto; Yuhei Ikemoto; Koji Hirata; Toshiya Uemura; Masanori Murakami

doi:10.4028/www.scientific.net/MSF.561-565.1217

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HomeMaterials Science ForumMaterials Science Forum Vols. 561-565Effect of Reducing Thickness of TiN Buffer Layers...

Effect of Reducing Thickness of TiN Buffer Layers on Epitaxial Growth of GaN Layes

Abstract:

We investigated effect of reducing thickness of TiN buffer layers on growth of the smooth GaN layers. The sputtered TiN layers with thicknesses in the range of 2 to 100 nm were deposited on sapphire substrates. The sputtered TiN layers were exposed NH3 + H2 mixed gas atmosphere at about 1000°C to enrich nitrogen concentration of the layers. GaN layers were deposited on the nitrogen-enriched TiN layer using a MOCVD method. Average grain size of the nitrogen-enriched TiN layer was minimized at the thickness of 5 nm. In the initial stages of GaN growth, density of GaN hexagons grown on the 5nm-thick TiN layers was the highest. The 2μm-thick GaN layers grown on the 5nm-thick TiN layers exhibited the smoothest surface. Thus, the 5nm thickness is believed to be the best thickness for the smooth GaN growth on the sapphire/TiN substrates.

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Materials Science Forum (Volumes 561-565)

Pages:

1217-1220

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.561-565.1217

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Online since:

October 2007

Authors:

Kazuhiro Ito, Yu Uchida, Sang Jin Lee, Susumu Tsukimoto, Yuhei Ikemoto, Koji Hirata, Toshiya Uemura, Masanori Murakami

Keywords:

Buffer Layer, Epitaxial Growth, Film Thickness, Gallium Nitride (GaN), TiN

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