Effect of Reducing Thickness of TiN Buffer Layers on Epitaxial Growth of GaN Layes

Abstract:

Article Preview

We investigated effect of reducing thickness of TiN buffer layers on growth of the smooth GaN layers. The sputtered TiN layers with thicknesses in the range of 2 to 100 nm were deposited on sapphire substrates. The sputtered TiN layers were exposed NH3 + H2 mixed gas atmosphere at about 1000°C to enrich nitrogen concentration of the layers. GaN layers were deposited on the nitrogen-enriched TiN layer using a MOCVD method. Average grain size of the nitrogen-enriched TiN layer was minimized at the thickness of 5 nm. In the initial stages of GaN growth, density of GaN hexagons grown on the 5nm-thick TiN layers was the highest. The 2μm-thick GaN layers grown on the 5nm-thick TiN layers exhibited the smoothest surface. Thus, the 5nm thickness is believed to be the best thickness for the smooth GaN growth on the sapphire/TiN substrates.

Info:

Periodical:

Materials Science Forum (Volumes 561-565)

Main Theme:

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee

Pages:

1217-1220

Citation:

K. Ito et al., "Effect of Reducing Thickness of TiN Buffer Layers on Epitaxial Growth of GaN Layes", Materials Science Forum, Vols. 561-565, pp. 1217-1220, 2007

Online since:

October 2007

Export:

Price:

$38.00

[1] K.N. Tu, J.W. Mayer and L.C. Feldman: Electronic Thin Film Science (Macmillan, New York 1992).

[2] H. Amano, N. Sawaki and I. Akasaki, Appl. Phys. Lett. Vol. 48 (1986), p.353.

[3] N. Koide, H. Kato, M. Sassa, S. Yamasaki, K. Manabe, M. Hashimoto, H. Amano, K. Hiramatsu and I. Akasaki, J. Cryst. Growth Vol. 115 (1991), p.639.

[4] T. Watanabe, K. Ito, S. Tsukimoto, Y. Ushida, M. Moriyama, N. Shibata and M. Murakami, Mater. Trans. Vol. 46 (2005), p. (1975).

[5] Y. Uchida, K. Ito, S. Tsukimoto, Y. Ikemoto, K. Hirata, N. Shibata and M. Murakami, J. Electronic Mater. Vol. 35 (2006), p.1806.

Fetching data from Crossref.
This may take some time to load.