Effect of Reducing Thickness of TiN Buffer Layers on Epitaxial Growth of GaN Layes

Abstract:

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We investigated effect of reducing thickness of TiN buffer layers on growth of the smooth GaN layers. The sputtered TiN layers with thicknesses in the range of 2 to 100 nm were deposited on sapphire substrates. The sputtered TiN layers were exposed NH3 + H2 mixed gas atmosphere at about 1000°C to enrich nitrogen concentration of the layers. GaN layers were deposited on the nitrogen-enriched TiN layer using a MOCVD method. Average grain size of the nitrogen-enriched TiN layer was minimized at the thickness of 5 nm. In the initial stages of GaN growth, density of GaN hexagons grown on the 5nm-thick TiN layers was the highest. The 2μm-thick GaN layers grown on the 5nm-thick TiN layers exhibited the smoothest surface. Thus, the 5nm thickness is believed to be the best thickness for the smooth GaN growth on the sapphire/TiN substrates.

Info:

Periodical:

Materials Science Forum (Volumes 561-565)

Main Theme:

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee

Pages:

1217-1220

DOI:

10.4028/www.scientific.net/MSF.561-565.1217

Citation:

K. Ito et al., "Effect of Reducing Thickness of TiN Buffer Layers on Epitaxial Growth of GaN Layes", Materials Science Forum, Vols. 561-565, pp. 1217-1220, 2007

Online since:

October 2007

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$35.00

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