Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing

Abstract:

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The study of fast diffusion processes in materials requires short isothermal annealing treatments combined with an accurate temperature measurement. The paper discusses the special demands on rapid thermal annealing (RTA) devices in diffusion research and how these can be met in practice. The scientific impact of RTA for diffusion research in semiconductors is demonstrated by several examples dealing with fast impurities in Ge and Si.

Info:

Periodical:

Materials Science Forum (Volumes 573-574)

Edited by:

W. Lerch and J. Niess

Pages:

35-43

DOI:

10.4028/www.scientific.net/MSF.573-574.35

Citation:

N. Stolwijk et al., "Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing", Materials Science Forum, Vols. 573-574, pp. 35-43, 2008

Online since:

March 2008

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Price:

$35.00

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