Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing

Nicolaas Stolwijk; Ludmila Lerner; Axel Giese; Wilfried Lerch

doi:10.4028/www.scientific.net/MSF.573-574.35

Paper Titles

Dedication I

Preface

The Expanding Role of Rapid Thermal Processing in CMOS Manufacturing
p.3

Evolution of Commercial RTP Modules
p.21

Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing
p.35

Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers
p.45

High Temperature RTP Application in SOI Manufacturing
p.61

Cleaning of Silicon Surfaces for Nanotechnology
p.77

Heavy Water in Gate Stack Processing
p.119

HomeMaterials Science ForumMaterials Science Forum Vols. 573-574Fast Diffusion in Germanium and Silicon...

Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing

Abstract:

The study of fast diffusion processes in materials requires short isothermal annealing treatments combined with an accurate temperature measurement. The paper discusses the special demands on rapid thermal annealing (RTA) devices in diffusion research and how these can be met in practice. The scientific impact of RTA for diffusion research in semiconductors is demonstrated by several examples dealing with fast impurities in Ge and Si.