High Temperature RTP Application in SOI Manufacturing

Christophe Maleville; Eric Neyret; Daniel Delprat; Ludovic Ecarnot

doi:10.4028/www.scientific.net/MSF.573-574.61

Paper Titles

The Expanding Role of Rapid Thermal Processing in CMOS Manufacturing
p.3

Evolution of Commercial RTP Modules
p.21

Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing
p.35

Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers
p.45

High Temperature RTP Application in SOI Manufacturing
p.61

Cleaning of Silicon Surfaces for Nanotechnology
p.77

Heavy Water in Gate Stack Processing
p.119

Advanced Gate Dielectric Development for VLSI Technology
p.133

A Growth Kinetics Model for the Radical Oxidation of Silicon
p.147

HomeMaterials Science ForumMaterials Science Forum Vols. 573-574High Temperature RTP Application in SOI...

High Temperature RTP Application in SOI Manufacturing

Abstract:

Significant performance enhancements are offered by silicon on insulator (SOI) or strained silicon, SOI being adopted for advanced devices in sustaining Moore’s law. Sub-45 nm device options are including fully depleted (FD) devices, that are stressing even more specifications for thickness uniformity. Nano-uniformity, considering thickness variation contributions from device level to wafer scale, has been introduced in substrate optimization and latest Unibond products are verifying FD requirements. Rapid Thermal Processing (RTP) based surface smoothing has been introduced in Unibond processing to combine thickness control and product quality requirements.