High Temperature RTP Application in SOI Manufacturing

Abstract:

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Significant performance enhancements are offered by silicon on insulator (SOI) or strained silicon, SOI being adopted for advanced devices in sustaining Moore’s law. Sub-45 nm device options are including fully depleted (FD) devices, that are stressing even more specifications for thickness uniformity. Nano-uniformity, considering thickness variation contributions from device level to wafer scale, has been introduced in substrate optimization and latest Unibond products are verifying FD requirements. Rapid Thermal Processing (RTP) based surface smoothing has been introduced in Unibond processing to combine thickness control and product quality requirements.

Info:

Periodical:

Materials Science Forum (Volumes 573-574)

Edited by:

W. Lerch and J. Niess

Pages:

61-74

DOI:

10.4028/www.scientific.net/MSF.573-574.61

Citation:

C. Maleville et al., "High Temperature RTP Application in SOI Manufacturing", Materials Science Forum, Vols. 573-574, pp. 61-74, 2008

Online since:

March 2008

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Price:

$35.00

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