A Growth Kinetics Model for the Radical Oxidation of Silicon

Olaf Storbeck; Wieland Pethe; Regina Hayn

doi:10.4028/www.scientific.net/MSF.573-574.147

Paper Titles

High Temperature RTP Application in SOI Manufacturing
p.61

Cleaning of Silicon Surfaces for Nanotechnology
p.77

Heavy Water in Gate Stack Processing
p.119

Advanced Gate Dielectric Development for VLSI Technology
p.133

A Growth Kinetics Model for the Radical Oxidation of Silicon
p.147

Investigation of Ultra Thin Thermal Nitrided Gate Dielectrics in Comparison to Plasma Nitrided Gate Dielectrics for High-Performance Logic Application for 65nm
p.153

High-K: Latest Developments and Perspectives
p.165

Production Worthy ALD in Batch Reactors
p.181

Ultra Shallow Depth Profiling with SIMS
p.197

HomeMaterials Science ForumMaterials Science Forum Vols. 573-574A Growth Kinetics Model for the Radical Oxidation...

A Growth Kinetics Model for the Radical Oxidation of Silicon

Abstract:

The silicon oxide growth kinetics were investigated for single wafer rapid thermal (RTP) and large batch vertical furnace radical oxidation processes under varying conditions. An oxidation model is proposed in which the oxidation rate of hydrogen–assisted radical oxidation is a combination of constant–rate low pressure wet oxidation and an oxygen radical driven process decaying with increasing oxide thickness. The model parameters for selected RTP and batch furnace oxidation processes are extracted and discussed. The implications of this model are compared to observed properties of the radical oxidation process like lattice orientation, stress independence, bird’s beak formation and thickness uniformity.