Advanced Gate Dielectric Development for VLSI Technology

Abstract:

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In this paper, gate dielectric scaling with nitrogen incorporation technologies is reviewed. In key technologies such as thermal nitridation, oxide/nitride stacked dielectric structure and nitrogen implant/plasma played fundamental role in advance of semiconductor industry. Besides the technologies, primary integration schemes and their impacts on device performance and reliability are also covered.

Info:

Periodical:

Materials Science Forum (Volumes 573-574)

Edited by:

W. Lerch and J. Niess

Pages:

133-146

DOI:

10.4028/www.scientific.net/MSF.573-574.133

Citation:

Y. Ma "Advanced Gate Dielectric Development for VLSI Technology", Materials Science Forum, Vols. 573-574, pp. 133-146, 2008

Online since:

March 2008

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Price:

$35.00

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