Advanced Gate Dielectric Development for VLSI Technology
In this paper, gate dielectric scaling with nitrogen incorporation technologies is reviewed. In key technologies such as thermal nitridation, oxide/nitride stacked dielectric structure and nitrogen implant/plasma played fundamental role in advance of semiconductor industry. Besides the technologies, primary integration schemes and their impacts on device performance and reliability are also covered.
W. Lerch and J. Niess
Y. Ma "Advanced Gate Dielectric Development for VLSI Technology", Materials Science Forum, Vols. 573-574, pp. 133-146, 2008