Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers
p.45
p.45
High Temperature RTP Application in SOI Manufacturing
p.61
p.61
Cleaning of Silicon Surfaces for Nanotechnology
p.77
p.77
Heavy Water in Gate Stack Processing
p.119
p.119
Advanced Gate Dielectric Development for VLSI Technology
p.133
p.133
A Growth Kinetics Model for the Radical Oxidation of Silicon
p.147
p.147
Investigation of Ultra Thin Thermal Nitrided Gate Dielectrics in Comparison to Plasma Nitrided Gate Dielectrics for High-Performance Logic Application for 65nm
p.153
p.153
High-K: Latest Developments and Perspectives
p.165
p.165
Production Worthy ALD in Batch Reactors
p.181
p.181
Advanced Gate Dielectric Development for VLSI Technology
Abstract:
In this paper, gate dielectric scaling with nitrogen incorporation technologies is reviewed. In key technologies such as thermal nitridation, oxide/nitride stacked dielectric structure and nitrogen implant/plasma played fundamental role in advance of semiconductor industry. Besides the technologies, primary integration schemes and their impacts on device performance and reliability are also covered.
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Periodical:
Materials Science Forum (Volumes 573-574)
Pages:
133-146
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Online since:
March 2008
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© 2008 Trans Tech Publications Ltd. All Rights Reserved
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