High-K: Latest Developments and Perspectives

Abstract:

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The paper reviews recent progress and current challenges in implementing high-k dielectrics in microelectronics. Logic devices, non-volatile-memories, DRAMs and low power mixedsignal components are found to be the technologies where high-k dielectrics are implemented or will be introduced soon. Two gate architectures have to be considerd: MOS with metal as gate electrode and MIM. In particular, Hf-silicates for logic and NVM devices in conventional MOS architecture and ZrO2 for DRAM cells in MIM architecture are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 573-574)

Edited by:

W. Lerch and J. Niess

Pages:

165-180

DOI:

10.4028/www.scientific.net/MSF.573-574.165

Citation:

A. J. Bauer et al., "High-K: Latest Developments and Perspectives", Materials Science Forum, Vols. 573-574, pp. 165-180, 2008

Online since:

March 2008

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