Heavy Water in Gate Stack Processing
p.119
p.119
Advanced Gate Dielectric Development for VLSI Technology
p.133
p.133
A Growth Kinetics Model for the Radical Oxidation of Silicon
p.147
p.147
Investigation of Ultra Thin Thermal Nitrided Gate Dielectrics in Comparison to Plasma Nitrided Gate Dielectrics for High-Performance Logic Application for 65nm
p.153
p.153
High-K: Latest Developments and Perspectives
p.165
p.165
Production Worthy ALD in Batch Reactors
p.181
p.181
Ultra Shallow Depth Profiling with SIMS
p.197
p.197
Implant Annealing – An Evolution from Soak over Spike to Millisecond Annealing
p.207
p.207
A Light-Induced Annealing of Silicon Implanted Layers
p.229
p.229
High-K: Latest Developments and Perspectives
Abstract:
The paper reviews recent progress and current challenges in implementing high-k dielectrics in microelectronics. Logic devices, non-volatile-memories, DRAMs and low power mixedsignal components are found to be the technologies where high-k dielectrics are implemented or will be introduced soon. Two gate architectures have to be considerd: MOS with metal as gate electrode and MIM. In particular, Hf-silicates for logic and NVM devices in conventional MOS architecture and ZrO2 for DRAM cells in MIM architecture are discussed.
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Periodical:
Materials Science Forum (Volumes 573-574)
Pages:
165-180
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Online since:
March 2008
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