High-K: Latest Developments and Perspectives
The paper reviews recent progress and current challenges in implementing high-k dielectrics in microelectronics. Logic devices, non-volatile-memories, DRAMs and low power mixedsignal components are found to be the technologies where high-k dielectrics are implemented or will be introduced soon. Two gate architectures have to be considerd: MOS with metal as gate electrode and MIM. In particular, Hf-silicates for logic and NVM devices in conventional MOS architecture and ZrO2 for DRAM cells in MIM architecture are discussed.
W. Lerch and J. Niess
A. J. Bauer et al., "High-K: Latest Developments and Perspectives", Materials Science Forum, Vols. 573-574, pp. 165-180, 2008