A Light-Induced Annealing of Silicon Implanted Layers

Bo Lojek

doi:10.4028/www.scientific.net/MSF.573-574.229

Paper Titles

High-K: Latest Developments and Perspectives
p.165

Production Worthy ALD in Batch Reactors
p.181

Ultra Shallow Depth Profiling with SIMS
p.197

Implant Annealing – An Evolution from Soak over Spike to Millisecond Annealing
p.207

A Light-Induced Annealing of Silicon Implanted Layers
p.229

Laser Annealing of Implanted Semiconductor Layers – One Bridge to Nano-Processing
p.237

An Overview of ms Annealing for Deep Sub-Micron Activation
p.257

Extended Defects Evolution in Pre-Amorphised Silicon after Millisecond Flash Anneals
p.269

Modeling and Simulation of Advanced Annealing Processes
p.279

HomeMaterials Science ForumMaterials Science Forum Vols. 573-574A Light-Induced Annealing of Silicon Implanted...

A Light-Induced Annealing of Silicon Implanted Layers

Abstract:

Since introducing Rapid Thermal Annealing, there has been disagreement among experimental data of ion-implanted and annealed layers. One explanation of these differences is the impact of optical irradiation and its interaction with semiconductor material. Although no plausible explanation has been offered, experimental evidence of “photonic effects” was reported in many works. In this work we estimate energy per atom available during recombination of the excited carriers. It is argued that the localization of energy states inside the band gap in ion-implant damaged material is responsible for “photonic effects.”