A Light-Induced Annealing of Silicon Implanted Layers

Abstract:

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Since introducing Rapid Thermal Annealing, there has been disagreement among experimental data of ion-implanted and annealed layers. One explanation of these differences is the impact of optical irradiation and its interaction with semiconductor material. Although no plausible explanation has been offered, experimental evidence of “photonic effects” was reported in many works. In this work we estimate energy per atom available during recombination of the excited carriers. It is argued that the localization of energy states inside the band gap in ion-implant damaged material is responsible for “photonic effects.”

Info:

Periodical:

Materials Science Forum (Volumes 573-574)

Edited by:

W. Lerch and J. Niess

Pages:

229-235

DOI:

10.4028/www.scientific.net/MSF.573-574.229

Citation:

B. Lojek "A Light-Induced Annealing of Silicon Implanted Layers", Materials Science Forum, Vols. 573-574, pp. 229-235, 2008

Online since:

March 2008

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$35.00

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