Modeling and Simulation of Advanced Annealing Processes

Alberto Martinez-Limia; Peter Pichler; Christian Steen; Silke Paul; Wilfried Lerch

doi:10.4028/www.scientific.net/MSF.573-574.279

Paper Titles

A Light-Induced Annealing of Silicon Implanted Layers
p.229

Laser Annealing of Implanted Semiconductor Layers – One Bridge to Nano-Processing
p.237

An Overview of ms Annealing for Deep Sub-Micron Activation
p.257

Extended Defects Evolution in Pre-Amorphised Silicon after Millisecond Flash Anneals
p.269

Modeling and Simulation of Advanced Annealing Processes
p.279

Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping
p.295

Ultra-Shallow Junction Formation Using Rapid Thermal Processing
p.305

Ultra-Rapid Thermal Process for ULSIs
p.319

Advanced Millisecond Annealing Technologies and its Applications and Concerns on Advanced Logic LSI Fabrication Processes
p.325

HomeMaterials Science ForumMaterials Science Forum Vols. 573-574Modeling and Simulation of Advanced Annealing...

Modeling and Simulation of Advanced Annealing Processes

Abstract:

In this contribution we illustrate some important features of the development of models for the simulation of advanced annealing processes. Taking arsenic as example we discuss the challenges that the last technology trends represent for process modeling. Issues like shallow implants, high doses, low total thermal budgets, and steep temperature profiles are discussed, highlighting the physical phenomena to take into account, and how to design models that reproduce them. We also discuss with examples how important are the critical evaluation of known parameters and established approaches, and the extraction of parameters from experiments. Finally we show some applications of our model for spike and flash annealing of arsenic implants.