An Overview of ms Annealing for Deep Sub-Micron Activation

Jeffrey C. Gelpey; Steve McCoy; Dave Camm; Wilfried Lerch

doi:10.4028/www.scientific.net/MSF.573-574.257

Paper Titles

Ultra Shallow Depth Profiling with SIMS
p.197

Implant Annealing – An Evolution from Soak over Spike to Millisecond Annealing
p.207

A Light-Induced Annealing of Silicon Implanted Layers
p.229

Laser Annealing of Implanted Semiconductor Layers – One Bridge to Nano-Processing
p.237

An Overview of ms Annealing for Deep Sub-Micron Activation
p.257

Extended Defects Evolution in Pre-Amorphised Silicon after Millisecond Flash Anneals
p.269

Modeling and Simulation of Advanced Annealing Processes
p.279

Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping
p.295

Ultra-Shallow Junction Formation Using Rapid Thermal Processing
p.305

HomeMaterials Science ForumMaterials Science Forum Vols. 573-574An Overview of ms Annealing for Deep Sub-Micron...

An Overview of ms Annealing for Deep Sub-Micron Activation

Abstract:

Millisecond annealing (MSA) has been developed over the last several years as a viable approach to achieve the high electrical activation, limited diffusion and high abruptness needed for junctions in the sub-65nm regime. This paper will provide an overview of the technology including the motivation, technology and some process results. Both main approaches for MSA, sub-melt laser and flash lamp annealing will be discussed as well as the potential challenges to bring these technologies into mainstream manufacturing.