Ultra-Rapid Thermal Process for ULSIs

Abstract:

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This paper reports on the ultra-rapid thermal annealing of next generation MOSFETs. In ultra-rapid thermal annealing, the most important issue is to achieve a good balance between electrical activation and impurity diffusion. Another issue of annealing implantation damages is also discussed: Optimized annealing combined with millisecond annealing and conventional halogen lamp annealing is necessary for annealing out defects at end-of range region. Application possibilities of millisecond annealing for deep junction activation and oxidation are also discussed.

Info:

Periodical:

Materials Science Forum (Volumes 573-574)

Edited by:

W. Lerch and J. Niess

Pages:

319-324

DOI:

10.4028/www.scientific.net/MSF.573-574.319

Citation:

K. Suguro "Ultra-Rapid Thermal Process for ULSIs", Materials Science Forum, Vols. 573-574, pp. 319-324, 2008

Online since:

March 2008

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$35.00

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