Doping Strategies for FinFETs

Abstract:

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In this paper the formation strategies for source and drain regions in vertical FinFETs are discussed. The technology challenges are very different than for planar bulk devices. Here the main doping approaches are presented with their advantages and drawbacks. Source/drain formation by ion implantation, and deposition techniques are discussed with respect to process simplicity, and device requirements.

Info:

Periodical:

Materials Science Forum (Volumes 573-574)

Edited by:

W. Lerch and J. Niess

Pages:

333-338

DOI:

10.4028/www.scientific.net/MSF.573-574.333

Citation:

B. J. Pawlak et al., "Doping Strategies for FinFETs", Materials Science Forum, Vols. 573-574, pp. 333-338, 2008

Online since:

March 2008

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Price:

$35.00

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