Influence of Si-Al-Ge-Sb Matricies on Tm3+ Excitation Levels

Abstract:

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Absorption and fluorescence spectra in the range from 350 to 1750 nm of several Tm3+- doped optical performs (rods) for optical fiber drawing were measured. Silica-based matrices of Al2O3-GeO2-P2O5-Sb2O3-SiO2 composition doped with several thousands ppm of Tm3+ were characterized. The preforms were fabricated by the Modified Chemical Vapor Deposition and by the solution doping methods. A new method, Genetic Algorithm SPEctra Decomposition was adopted for processing of the measured absorption spectra. This decomposition made it possible to calculate the oscillator strengths of Tm3+ absorption levels. Fluorescence bands of Tm3+ at 800 nm or 1640 nm were found in fluorescence spectra measured on the preform samples when excited at 1064 nm only.

Info:

Periodical:

Materials Science Forum (Volumes 587-588)

Edited by:

António Torres Marques, António Fernando Silva, António Paulo Monteiro Baptista, Carlos Sá, Fernando Jorge Lino Alves, Luís Filipe Malheiros and Manuel Vieira

Pages:

293-297

DOI:

10.4028/www.scientific.net/MSF.587-588.293

Citation:

M. Pospíšilová et al., "Influence of Si-Al-Ge-Sb Matricies on Tm3+ Excitation Levels", Materials Science Forum, Vols. 587-588, pp. 293-297, 2008

Online since:

June 2008

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$35.00

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