Influence of Si-Al-Ge-Sb Matricies on Tm3+ Excitation Levels

M. Pospíšilová; P. Adámek; P. Peterka; V. Kubeček; I. Kašík; V. Matějec

doi:10.4028/www.scientific.net/MSF.587-588.293

Paper Titles

Semiconducting YBCO Thin Films for Uncooled Terahertz Imagers
p.273

Synthesis of Y₃Fe₅O₁₂ via Thermal Decomposition of Polynuclear Coordination Compounds
p.278

Concentration-Dependent Photoluminescence and Raman of p-Type GaAs Grown in a Metallic-Arsenic-Based-MOCVD System
p.283

Electrochromic Studies of Prussian Blue Intercalated Compounds
p.288

Influence of Si-Al-Ge-Sb Matricies on Tm³⁺ Excitation Levels
p.293

Study of SiGe Alloys with Different Germanium Concentrations Implanted with Mn and As Ions
p.298

Structural and Magnetic Properties of Nanogranular BaTiO₃-CoFe₂O₄ Thin Films Deposited by Laser Ablation on Si/Pt Substrates
p.303

Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H Using PECVD Technique
p.308

Magnetic Field Enhancement with Soft Magnetic Flux Guides
p.313

HomeMaterials Science ForumMaterials Science Forum Vols. 587-588Influence of Si-Al-Ge-Sb Matricies on Tm3+...

Influence of Si-Al-Ge-Sb Matricies on Tm³⁺ Excitation Levels

Abstract:

Absorption and fluorescence spectra in the range from 350 to 1750 nm of several Tm3+- doped optical performs (rods) for optical fiber drawing were measured. Silica-based matrices of Al2O3-GeO2-P2O5-Sb2O3-SiO2 composition doped with several thousands ppm of Tm3+ were characterized. The preforms were fabricated by the Modified Chemical Vapor Deposition and by the solution doping methods. A new method, Genetic Algorithm SPEctra Decomposition was adopted for processing of the measured absorption spectra. This decomposition made it possible to calculate the oscillator strengths of Tm3+ absorption levels. Fluorescence bands of Tm3+ at 800 nm or 1640 nm were found in fluorescence spectra measured on the preform samples when excited at 1064 nm only.