Influence of Si-Al-Ge-Sb Matricies on Tm3+ Excitation Levels
Absorption and fluorescence spectra in the range from 350 to 1750 nm of several Tm3+- doped optical performs (rods) for optical fiber drawing were measured. Silica-based matrices of Al2O3-GeO2-P2O5-Sb2O3-SiO2 composition doped with several thousands ppm of Tm3+ were characterized. The preforms were fabricated by the Modified Chemical Vapor Deposition and by the solution doping methods. A new method, Genetic Algorithm SPEctra Decomposition was adopted for processing of the measured absorption spectra. This decomposition made it possible to calculate the oscillator strengths of Tm3+ absorption levels. Fluorescence bands of Tm3+ at 800 nm or 1640 nm were found in fluorescence spectra measured on the preform samples when excited at 1064 nm only.
António Torres Marques, António Fernando Silva, António Paulo Monteiro Baptista, Carlos Sá, Fernando Jorge Lino Alves, Luís Filipe Malheiros and Manuel Vieira
M. Pospíšilová et al., "Influence of Si-Al-Ge-Sb Matricies on Tm3+ Excitation Levels", Materials Science Forum, Vols. 587-588, pp. 293-297, 2008