Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H Using PECVD Technique

R. Prabakaran; Hugo Aguas; Luís Pereira; E. Elangovan; Elvira Fortunato; Rodrigo Martins; Isabel Ferreira

doi:10.4028/www.scientific.net/MSF.587-588.308

Paper Titles

Electrochromic Studies of Prussian Blue Intercalated Compounds
p.288

Influence of Si-Al-Ge-Sb Matricies on Tm³⁺ Excitation Levels
p.293

Study of SiGe Alloys with Different Germanium Concentrations Implanted with Mn and As Ions
p.298

Structural and Magnetic Properties of Nanogranular BaTiO₃-CoFe₂O₄ Thin Films Deposited by Laser Ablation on Si/Pt Substrates
p.303

Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H Using PECVD Technique
p.308

Magnetic Field Enhancement with Soft Magnetic Flux Guides
p.313

Transport Properties in All Oxide Magnetic Multilayers
p.318

Incorporation of Ga in CIGS Absorber Layers Formed by RF-Magnetron Sputtering in Se Vapours
p.323

New Experimental Facts Concerning the Thermally Stimulated Discharge Current in Dielectric Materials
p.328

HomeMaterials Science ForumMaterials Science Forum Vols. 587-588Optical and Microstructural Investigations of...

Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H Using PECVD Technique

Abstract:

In the present work, the spectroscopic ellipsometry (1.5 - 5.5 eV) was used to investigate the effects of current density induced microstructural variations and their influence on the electronic states of as-prepared and a-Si:H coated porous silicon (PS). The pseudodielectric responses of the low and high current densities (5 and 40 mA/cm2) were analyzed using a multilayer model within the effective medium approximation. The FTIR investigation reveals the enhancement of surface oxide (Si-Ox) layer with current density and the improvement of the Si-Hx band after a-Si:H coating.