Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H Using PECVD Technique
In the present work, the spectroscopic ellipsometry (1.5 - 5.5 eV) was used to investigate the effects of current density induced microstructural variations and their influence on the electronic states of as-prepared and a-Si:H coated porous silicon (PS). The pseudodielectric responses of the low and high current densities (5 and 40 mA/cm2) were analyzed using a multilayer model within the effective medium approximation. The FTIR investigation reveals the enhancement of surface oxide (Si-Ox) layer with current density and the improvement of the Si-Hx band after a-Si:H coating.
António Torres Marques, António Fernando Silva, António Paulo Monteiro Baptista, Carlos Sá, Fernando Jorge Lino Alves, Luís Filipe Malheiros and Manuel Vieira
R. Prabakaran et al., "Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H Using PECVD Technique", Materials Science Forum, Vols. 587-588, pp. 308-312, 2008