Authors: Yun Yun Xu, Xin Nian Li, Shan Dan Zhou, Tao Zhang, Zheng Ming Li
Abstract: Inorganic non-metallic materials are indispensable and fundamental materials to develop modern industry, agriculture, national defense and science and technology. With the recovery and development of global economy, inorganic non-metallic materials come close to important program opportunity. This paper reviewed recent development on inorganic non-metallic materials technology and industry and analyzed development trend, aimed at providing references for development on inorganic non-metallic technology and industry in Jiangxi province.
Authors: Qiang Wang, Ling Na Sun, Chang Wen Hu, Chuan Bao Cao
Abstract: With the continuous development of Electronic Warfare Technology (ECM) and new requirements of military modernization, stealthy technology played an important role in military equipment. Mechanism of new stealthy continues to be broken through and numbers of successful developments of new types of stealthy materials are put into use. New stealthy materials are the basis and key of stealthy technology and their developments are promoted by the improvements of detection and guidance of military technology. The studies of new stealthy functional nano-materials are analyzed and the stealthy mechanism of functional materials is introduced. The research progress, classification, preparation methods and the radar absorption mechanism of stealthy for new stealthy functional nano-materials are discussed. The new stealthy functional nano-materials are compared with the traditional radar absorption materials. The development trend and application prospects of stealthy functional nano-materials are also estimated.
Authors: Stanislav Stříteský, Jozef Krajčovič, Martin Vala, Martin Weiter
Abstract: Organic semiconductors are suitable for application in biosensors and sensors based on transistors. The influence of soluble group modifications on the performance of diketopyrrolopyrrole-based organic field-effect transistors (OFETs) is studied. The lowest mobility 1·10-9 cm2/Vs was observed for non-symmetric substitution O,N. Measurable charge carrier mobility was observed due to reduction of the density charge trapping states after application of organosilane self-assembled monolayers (SAMs) on thinner gate-dielectrics (90 nm). We report similar drift mobility 1·10-7 cm2/Vs for smallest soluble group “butyl” as for biggest group “EthylAdamantyl” in N,N and O,O substitution prepared by spin-coating.