Elaboration of Porous Silicon Multilayer Using Resistive p-Type Si

O. Fellahi; T. Hadjersi; L. Guerbous

doi:10.4028/www.scientific.net/MSF.609.201

Paper Titles

Optimization of DLC/PS Antireflection Coating Properties for Multicrystalline Silicon Solar Cells
p.179

Preparation and Characterization of Microporous Membranes Prepared by Wet Phase Inversion. Application to Ni (II) Transport
p.183

Synthesis and Characterization of Cerium Oxide (CeO₂) Nanoparticles
p.189

Electrical Properties Dependent on Schottky Diode Pd/PSC-pSi(100) Based on Hydrocarbon Gas Sensor
p.195

Elaboration of Porous Silicon Multilayer Using Resistive p-Type Si
p.201

Electrodeposition of CoNiFe Alloys on n-Type Silicon
p.207

Electrical and Optical Behavior of Al₂O₃/Porous Silicon/Silicon Structures
p.213

Sol-Gel Synthesis of SiO₂-TiO₂ Film as Antireflection Coating on Silicon for Photovoltaic Application
p.221

Hydrogen Sensor: Effect of Palladium Thickness and Porous Structure of Silicon
p.225

HomeMaterials Science ForumMaterials Science Forum Vol. 609Elaboration of Porous Silicon Multilayer Using...

Elaboration of Porous Silicon Multilayer Using Resistive p-Type Si

Abstract:

Porous silicon is largely studied in the field of photonics because of its interesting optical properties. In this work we present an experimental study about the elaboration of a multilayer structure by photoelectrochemical etching. p-Si(100) with resistivity of 100 Ωcm is used in this work. Two different current densities were used namely 150 mA/cm2 and 10 mA/cm2. We found that the anodization time is a crucial parameter for the formation of multilayer structures. The times of 2 and 5 seconds appears as optimal times for the elaboration of multilayer structures with 16 layers. Finally, we have determined that these structures exhibit strong luminescence at 600 nm.