Elaboration of Porous Silicon Multilayer Using Resistive p-Type Si
Porous silicon is largely studied in the field of photonics because of its interesting optical properties. In this work we present an experimental study about the elaboration of a multilayer structure by photoelectrochemical etching. p-Si(100) with resistivity of 100 Ωcm is used in this work. Two different current densities were used namely 150 mA/cm2 and 10 mA/cm2. We found that the anodization time is a crucial parameter for the formation of multilayer structures. The times of 2 and 5 seconds appears as optimal times for the elaboration of multilayer structures with 16 layers. Finally, we have determined that these structures exhibit strong luminescence at 600 nm.
O. Fellahi et al., "Elaboration of Porous Silicon Multilayer Using Resistive p-Type Si", Materials Science Forum, Vol. 609, pp. 201-205, 2009