Elaboration of Porous Silicon Multilayer Using Resistive p-Type Si

Abstract:

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Porous silicon is largely studied in the field of photonics because of its interesting optical properties. In this work we present an experimental study about the elaboration of a multilayer structure by photoelectrochemical etching. p-Si(100) with resistivity of 100 Ωcm is used in this work. Two different current densities were used namely 150 mA/cm2 and 10 mA/cm2. We found that the anodization time is a crucial parameter for the formation of multilayer structures. The times of 2 and 5 seconds appears as optimal times for the elaboration of multilayer structures with 16 layers. Finally, we have determined that these structures exhibit strong luminescence at 600 nm.

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Periodical:

Edited by:

N.Gabouze

Pages:

201-205

DOI:

10.4028/www.scientific.net/MSF.609.201

Citation:

O. Fellahi et al., "Elaboration of Porous Silicon Multilayer Using Resistive p-Type Si", Materials Science Forum, Vol. 609, pp. 201-205, 2009

Online since:

January 2009

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$35.00

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