Electrical and Optical Behavior of Al2O3/Porous Silicon/Silicon Structures

N. Gabouze; Kahina Ait-Hamouda

doi:10.4028/www.scientific.net/MSF.609.213

Paper Titles

Synthesis and Characterization of Cerium Oxide (CeO₂) Nanoparticles
p.189

Electrical Properties Dependent on Schottky Diode Pd/PSC-pSi(100) Based on Hydrocarbon Gas Sensor
p.195

Elaboration of Porous Silicon Multilayer Using Resistive p-Type Si
p.201

Electrodeposition of CoNiFe Alloys on n-Type Silicon
p.207

Electrical and Optical Behavior of Al₂O₃/Porous Silicon/Silicon Structures
p.213

Sol-Gel Synthesis of SiO₂-TiO₂ Film as Antireflection Coating on Silicon for Photovoltaic Application
p.221

Hydrogen Sensor: Effect of Palladium Thickness and Porous Structure of Silicon
p.225

Properties of Pt-Assisted Electroless Etched Silicon in HF/Na₂S₂O₈ Solution
p.231

Effect of Chromium and Vanadium on Nanolayered Ternary Carbides: AB Initio Study
p.239

HomeMaterials Science ForumMaterials Science Forum Vol. 609Electrical and Optical Behavior of Al2O3/Porous...

Electrical and Optical Behavior of Al₂O₃/Porous Silicon/Silicon Structures

Abstract:

In this paper, a promising class of optical filters is introduced, based on Al2O3/PS/Si structure. The filters consist of thin layer of aluminium electrochemically oxidized in different aqueous solution, on porous silicon. The spectral sensitivity can be easily varied by Al2O3 thickness. This result is a consequence of refractive index variation of Al2O3 and PS layers, confirmed by ellipsometry measurements.