Properties of Pt-Assisted Electroless Etched Silicon in HF/Na2S2O8 Solution

Abstract:

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The paper reports on hydrothermal electroless etching of high resistivity p-type Si(100) at 35°C. A thin layer of platinum (Pt) was deposited onto the silicon surface by evaporation under vacuum (~ 10-6 Torr) prior to immersion in a solution of HF/Na2S2O8. The HF concentration was kept at 22.5 M while the concentration of Na2S2O8 was varied from 0.03 to 0.18 M. The etching time was varied from 15 to 75 min. The morphology and optical properties of the etched layer as a function of oxidant concentration and etching time were investigated using scanning electron microscopy (SEM) and photoluminescence measurements.

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Periodical:

Edited by:

N.Gabouze

Pages:

231-237

DOI:

10.4028/www.scientific.net/MSF.609.231

Citation:

N. Megouda et al., "Properties of Pt-Assisted Electroless Etched Silicon in HF/Na2S2O8 Solution", Materials Science Forum, Vol. 609, pp. 231-237, 2009

Online since:

January 2009

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Price:

$35.00

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