Phase Explosion in Silicon and Titanium Targets Irradiated by Third Harmonic Nd-YAG Pulsed Laser

Tahar  Kerdja; K. Yahiaoui; A. Bendib; S. Malek

doi:10.4028/www.scientific.net/MSF.609.37

Paper Titles

Nanocrystal Non-Volatile Memory Devices
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Sm_1-xNd_xNiO₃ Thin Films Deposition by KrF Laser Ablation
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Problems with Synthesis of Chalcopyrite CuIn_1-xB_xSe₂
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Phase Explosion in Silicon and Titanium Targets Irradiated by Third Harmonic Nd-YAG Pulsed Laser
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Optical Properties of the Strained Layer Superlattices (GaAs)₆/(GaP)_m(001) (m=2, 4 and 6)
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Characterization of a-C:H Thin Films Deposited from C₂H₄ by PECVD Microwave Discharge
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Thin Layered Structures Analysis Using NUR Reflectometer
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Characterization of SiOF Thin Films Deposited by PECVD from Hexamethyldisiloxane in Mixture with Oxygen and CF₄
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HomeMaterials Science ForumMaterials Science Forum Vol. 609Phase Explosion in Silicon and Titanium Targets...

Phase Explosion in Silicon and Titanium Targets Irradiated by Third Harmonic Nd-YAG Pulsed Laser

Abstract:

In this work, the combined diagnostic measurements of ablated material by scanning electron microscopy of the craters and ion time of flight analysis have been employed to study the interaction of third harmonic Nd-Yag laser with silicon and titanium target. Evidence for the transition from normal vaporization to phase explosion has been obtained, showing an abrupt increase in the mass ablation rate beyond a laser intensity threshold and round-shaped micrometer-sized cavities found on the irradiated areas. Ion time of flight analysis is used to estimate the surface temperature under near threshold ablation conditions.