Characterization of a-C:H Thin Films Deposited from C₂H₄ by PECVD Microwave Discharge

Abstract:

Some investigations on physico-chemical properties of hydrogenated amorphous carbon (a-C:H) thin films deposited from C2H4 precursor have been carried out. The films were elaborated in a Microwave Multipolar Plasma reactor excited at Distributed Electron Cyclotron Resonance (MMP-DECR). The effects of the plasma power on the electrical and structural characteristics of the deposited films have been evaluated. It appeared that for low plasma power ( 400 W), the deposition rate and the hydrogen concentration increases, whereas the Csp2 concentration remains constant. Beyond 400 W, the deposition rate and the hydrogen concentration reach saturation levels and the Csp2 concentration decreases. In contrast, the film density decreased with the increase of the plasma power. Below 400 W, the dielectric constant decreased with the increase of the plasma power, however, beyond 400 W its value remained almost constant. The correlation between film characterization and properties shows that the permittivity is driven by the film density and the film structure.

• Periodical: Materials Science Forum (Volume 609)
• Pages: 49-52
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.609.49
• Online since: January 2009
• Authors: M. Kihel, R. Clergeraux, Salah Sahli, D. Escaich, Y. Segui, Patrice Raynaud
• Keywords: a-C:H Thin Film, C₂H₄ Precursor, PECVD, Physico-Chemical Properties

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