Thermoelectric Properties P-Type Si-20 at % Ge by Addition of TiN Nanoparticles

Zhong Wang; Hui Chen; Ying Chu; Yan Cheng; Lei Zhu; Xu Yu Jian; Hai Jun Yu

doi:10.4028/www.scientific.net/MSF.610-613.399

Paper Titles

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Preparation and Research on TiO₂/SiO₂ Nanofilm with High Transmittance on Solar Cell Glass
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One-Step Sintering of CoSb₃ Thermoelectric Material and Cu-W Alloy by Spark Plasma Sintering
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Thermoelectric Properties of Bi_0.5Sb_1.5Te₃ Prepared by the Ultrarapid Quenching Process
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Thermoelectric Properties P-Type Si-20 at % Ge by Addition of TiN Nanoparticles
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Effect of B₂O₃ on Long-Last Phosphorescence of SrAl₂O₄:Eu²⁺,Dy³⁺
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Analysis and Design of High-Speed Flywheel on Satellite Energy Storage/Attitude Control System
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Polyamide as a Matrix for the Creation of Form-Stable Phase Change Materials
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Research on Technology of Blast Furnace Energy Saving and Optimization of Operation Principle
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Thermoelectric Properties P-Type Si-20 at % Ge by Addition of TiN Nanoparticles

Abstract:

SiGe alloy composite material including TiN nanoparticle were prepared. The TiN nanoparticles as the inert scattering center were fabricated by Nitrogen plasma-metal reaction. The sintered samples were characterized by electrical resistivity and seebeck coefficient measurement. Adding nanophase inclusion into the SiGe alloy matrix, the Seebeck coefficient increased, the electrical conductivity decreased and the electrical power factor only slightly reduced.