Thermoelectric Properties P-Type Si-20 at % Ge by Addition of TiN Nanoparticles

Abstract:

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SiGe alloy composite material including TiN nanoparticle were prepared. The TiN nanoparticles as the inert scattering center were fabricated by Nitrogen plasma-metal reaction. The sintered samples were characterized by electrical resistivity and seebeck coefficient measurement. Adding nanophase inclusion into the SiGe alloy matrix, the Seebeck coefficient increased, the electrical conductivity decreased and the electrical power factor only slightly reduced.

Info:

Periodical:

Materials Science Forum (Volumes 610-613)

Main Theme:

Edited by:

Zhong Wei Gu, Yafang Han, Fu Sheng Pan, Xitao Wang, Duan Weng and Shaoxiong Zhou

Pages:

399-402

DOI:

10.4028/www.scientific.net/MSF.610-613.399

Citation:

Z. Wang et al., "Thermoelectric Properties P-Type Si-20 at % Ge by Addition of TiN Nanoparticles ", Materials Science Forum, Vols. 610-613, pp. 399-402, 2009

Online since:

January 2009

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Price:

$35.00

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