Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

Lan Zhao; Zheng Xiong Lu; Cai Jing Cheng; De Gang Zhao; Jian Jun Zhu; Bao Juan Sun; Bo Qu; Xiang Feng Zhang; Wei Guo Sun

doi:10.4028/www.scientific.net/MSF.610-613.598

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HomeMaterials Science ForumMaterials Science Forum Vols. 610-613Correlation Between Lattice Strain and Energy Gap...

Correlation Between Lattice Strain and Energy Gap Bowing of Al_xGa_1-xN Epitaxial Thin Films

Abstract:

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.