Fabrication and Properties of Large-Area Silicon Nanowire Arrays

Hui Fang; Yin Wu; Jing Zhu

doi:10.4028/www.scientific.net/MSF.610-613.604

Paper Titles

Synthesis of Carbon Nanofibers: A Catalyst Derived from Cupric Carbonate Basic during Acetylene Decomposition
p.579

Self-Assembly Growth and Size Control of Silver Nanocrystals for Nonvolatile Memory Applications
p.585

Study on the Microstructure and Deformation Behavior of Ultrafine-Crystalline Cu-Y Ribbons
p.591

Correlation Between Lattice Strain and Energy Gap Bowing of Al_xGa_1-xN Epitaxial Thin Films
p.598

Fabrication and Properties of Large-Area Silicon Nanowire Arrays
p.604

A Novel Inorganic Ion Conductor Electrochromic Device: MoO₃/LiAlO₂/NiO_x
p.610

Photoluminescence Properties Influenced by Calcining Condition and Doping Concentration of Nano-Sized ZnGa₂O₄: Cr³⁺
p.616

Study of a New Chromium Carbide Reinforced Ni₃Al Matrix Composite Hardfacing Material on IC6SX
p.623

Microstructure Characterization of the Cu-Ti-C Composites Prepared by Mechanical Alloying and Spark Plasma Sintering
p.629

HomeMaterials Science ForumMaterials Science Forum Vols. 610-613Fabrication and Properties of Large-Area Silicon...

Fabrication and Properties of Large-Area Silicon Nanowire Arrays

Abstract:

Wet chemical etching with dry metal deposition method has been developed to fabricate large-area aligned silicon nanowire (SiNW) arrays. The combination of nanoclusters Ag film with proper interconnection and interspaces (of about 20 nm thick), and proper temperature during etching (from 20 to 80 °C) is vital to successfully fabricating large-area uniform SiNW arrays. Raman and photoluminescence spectra of the SiNW arrays indicated their potential applications in chemical detection and optical devices ,respectively.