The Mechanism of Polymer Particles in Silicon Wafer CMP

Abstract:

In order to increase the material removal rate of silicon wafer, composite abrasives slurry was used in CMP. Zeta potential of polymer particle was measured and interaction potential energy between silica abrasives and polymer particles in slurry were analyzed and calculated. Adsorptions between silica abrasives and polymer particles were observed with TEM. CMP experiments had been taken to analyze the effects of polishing parameters (the concentration of colloidal silica and polymer particle, the pressure and the speed of polishing) on the material removal rate. The mechanism of polymer particle in polishing was elaborated. Experimental results indicated that PS, PMMA and BGF polymer particles could adsorb silica abrasives in slurry. Silica shell/PS core, silica shell/PMMA core and silica shell/BGF core particles could be used to formulate composite abrasives slurries. The material removal rate with composite abrasives slurry was higher than that of single abrasive slurry. The maximum material removal rate was obtained with silica shell/BGF core composite abrasives slurry.

• Periodical: Materials Science Forum (Volumes 626-627)
• Pages: 231-236
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.626-627.231
• Online since: August 2009
• Authors: Xue Feng Xu, H.F. Chen, H.T. Ma, B.X. Ma, Wei Peng
• Keywords: Chemical Mechanical Polishing (CMP), Composite Particles Slurry, Polymer Particle, Silicon Wafer

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