Selected Interlayer of Diamond Deposition on γ-TiAl Intermetallic Compounds Prepared by Microwave-Plasma Assisted CVD

Saleh B. Abu Suilik; Masayuki Ohshima; Toshimitsu Tetsui; Kazuhiro Hasezaki

doi:10.4028/www.scientific.net/MSF.631-632.425

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HomeMaterials Science ForumMaterials Science Forum Vols. 631-632Selected Interlayer of Diamond Deposition on...

Selected Interlayer of Diamond Deposition on γ-TiAl Intermetallic Compounds Prepared by Microwave-Plasma Assisted CVD

Abstract:

Several diamond coatings were performed on -TiAl substrates by a microwave-plasma assisted CVD, which were made directly to the substrate and indirectly to the TiC, Ti5Si3, Al2O3+TiO2 and Si layers on the substrate. The direct coatings suffered from severe delamination and cracks. The deposited layers on TiC and Ti5Si3 layers partially delaminated, while those on Al2O3+TiO2 and Si layers adhered well without delamination. All the diamond films deposited were characterized using scanning electron microscopy, Raman spectroscopy, and X-ray diffraction. Raman spectra showed that poly- and nano-crystalline diamond films were obtained for the coatings of -TiAl.

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Materials Science Forum (Volumes 631-632)

Pages:

425-430

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.631-632.425

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Online since:

October 2009

Authors:

Saleh B. Abu Suilik, Masayuki Ohshima, Toshimitsu Tetsui, Kazuhiro Hasezaki

Keywords:

Diamond Coating, Gamma Titanium Aluminide, Interlayer, MPACVD, Residual Stress

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