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HomeMaterials Science ForumMaterials Science Forum Vols. 636-637PL Properties of SiOx Obtained by HFCVD Technique

PL Properties of SiO_x Obtained by HFCVD Technique

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Abstract:

In this work, SiOx films were deposited on crystalline silicon substrates and their microstructure and photoluminescent properties are reported. The films were deposited by the Hot Filament Chemical Vapor Deposition (HFCVD) technique using molecular hydrogen (H2) and silica glass (SiO2) as reactants. The H2 becomes atomic hydrogen when is flowed through a tungsten wire heated at 2000 °C. According to the chemical reaction, the atomic hydrogen reacts with the solid source (SiO2) and a SiOx film on a substrate is obtained. From FTIR and room temperature photoluminescence measurements can be concluded that, regions with different average size of silicon nano-clusters in the oxide are formed and they probably are the responsible for the light emission in the visible range.

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Advanced Materials Forum V

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Periodical:

Materials Science Forum (Volumes 636-637)

Pages:

444-449

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.636-637.444

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Online since:

January 2010

Authors:

T. Díaz-Becerril, G. García-Salgado, A. Coyopol, E. Rosendo-Andrés, H. Juárez

Keywords:

HFCVD, Photoluminescent Oxide, Si-Rich SiO_x

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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