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HomeMaterials Science ForumMaterials Science Forum Vols. 638-642Comparison for Thermoelectric Properties of BiTe...

Comparison for Thermoelectric Properties of BiTe Based Semiconductor Processed by the Mechanical Alloying and the High Pressure Torsion after Melt Grown by the Vertical Bridgman Method

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THERMEC 2009

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Periodical:

Materials Science Forum (Volumes 638-642)

Pages:

1923-1928

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.638-642.1923

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Online since:

January 2010

Authors:

Kazuhiro Hasezaki, Maki Ashida, Takashi Hamachiyo, Hirotaka Matsunoshita, Z. Horita

Keywords:

Antimony, Bismuth, High Pressure Torsion (HPT), Mechanical Alloying (MA), Tellurium, Thermoelectric Semiconductor

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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