Comparison for Thermoelectric Properties of BiTe Based Semiconductor Processed by the Mechanical Alloying and the High Pressure Torsion after Melt Grown by the Vertical Bridgman Method

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Periodical:

Materials Science Forum (Volumes 638-642)

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Edited by:

T. Chandra, N. Wanderka, W. Reimers , M. Ionescu

Pages:

1923-1928

DOI:

10.4028/www.scientific.net/MSF.638-642.1923

Citation:

K. Hasezaki et al., "Comparison for Thermoelectric Properties of BiTe Based Semiconductor Processed by the Mechanical Alloying and the High Pressure Torsion after Melt Grown by the Vertical Bridgman Method", Materials Science Forum, Vols. 638-642, pp. 1923-1928, 2010

Online since:

January 2010

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$35.00

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