Influence of High-Mobility Boundaries on the Selective Growth of Goss Grain in Grain-Oriented Electrical Steel

Abstract:

Behavior of the selective growth of Goss grains in grain-oriented electrical steel was investigated by controlling the heating rate in secondary recrystallization annealing．It was clarified that the important factors on the selective growth of Goss grains were the frequency and the mobility of grain boundary. It was demonstrated that boundaries having misorientation angle between 30 degree and 35 degree had the greatest influence on the selective growth, and the change of crystal orientation of secondary recrystallized grains expected by analyzing the change of primary recrystallized texture during secondary recrystallization annealing showed good agreement with the experimental result.

• Periodical: Materials Science Forum (Volumes 638-642)
• Pages: 3430-3434
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.638-642.3430
• Online since: January 2010
• Authors: Takeshi Omura, Yasuyuki Hayakawa
• Keywords: Electrical Steel, Goss Grain, Misorientation Angle, Mobility, Secondary Recrystallization, Selective Growth

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[1] 02 0 2 4 6 8 10 Deviation angle from ideal Goss orientation around TD/<110>（degree） R e lative in flu e n c e s i) 15Hr ii) 45Hr.

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[1] 02 0 2 4 6 8 10 Deviation angle from ideal Goss orientation around ND/<110>（degree） R elative influence i) 15Hr ii) 45Hr.

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[1] 03 0 2 4 6 8 10 Deviation angle from ideal Goss orientation around RD/<110>（degree） R e lativ e in flu e nc e i) 15Hr ii) 45Hr Fig. 8 The relative influence on selective growth of secondary recrystallized grainhaving each deviation angle from ideal Goss orientation calculated from the sample prepared by finishing secondary recrystallization annealing at 1073K, (a) heating time under 1073K=15Hr, (b) heating time under 1073K=45Hr a) RD/<110> axis, b) TD/<110> axis, c) RD/<110> axis.