Characterization of Lanthanoid and Aluminum Based Oxide Film for Wide Bandgap Semiconductors

H. Aoki; N. Komatsu; M. Honjo; K. Masumoto; C. Kimura; T. Sugino

doi:10.4028/www.scientific.net/MSF.638-642.3943

Paper Titles

Tools and Technologies for Hot Forming with Local Adjustment of Part Properties
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Simulating Phase Coarsening of Ultra-High Volume Fractions
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Method of Constraint Loss Correction for CTOD Fracture Toughness under Welding Residual Stress Field
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Evaluation of High Temperature Fatigue Behaviour of P22 by Miniature Specimen Testing
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Characterization of Lanthanoid and Aluminum Based Oxide Film for Wide Bandgap Semiconductors
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Microstructural and Mechanical Studies in Al-Mg Based Alloys Obtained by Conventional and P/M Processes after Special Thermomechanical Treatments
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Friction Stir Welding of Magnesium Alloys under Different Process Parameters
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The Effect of Ultrasonic Injection on the Microstructure and Mechanical Properties of A356 Alloy
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System for Process Analysis and Hardness Prediction when Quenching Axially-Symmetrical Workpieces of any Shape in Liquid Quenchants
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HomeMaterials Science ForumMaterials Science Forum Vols. 638-642Characterization of Lanthanoid and Aluminum Based...

Characterization of Lanthanoid and Aluminum Based Oxide Film for Wide Bandgap Semiconductors

Abstract:

A gate insulator film with a wide bandgap and a high dielectric constants required to achieve high power field effect transistor (FET) using wide bandgap semiconductors such as SiC and diamond. We can achieve to suppress the gate leakage current and the charge shifts by using the AlSiO film. We found that the leakage current of Nitrogen-doped AlSiO film can be suppressed in high temperature region compared with AlSiO film. In addition, we attempted to study Yttrium aluminate (YAlO) and Lanthanum aluminate (LaAlO) as a gate insulator film. Since the Y (+3) and La(+3) have the same valence as Al (+3), it is expected that there is an advantage that Y, La doping generates less dangling bonds in the Al2O3 film. We can achieve to form aluminum based oxide film with higher dielectric constant by doping Lanthanoid atoms such as Y and La. The optimized YAlO and LaAlO films were applied to SiC-MIS structure. The Lanthanoid and Aluminum based oxide films can readily be applicable to wide bandgap semiconductor devices.