Structural and Morphological Properties of HfxZr1-xO2 Thin Films Prepared by Pechini Route

L.A. García-Cerda; Bertha A. Puente Urbina; M.A. Quevedo-López; B.E. Gnade; Leo A. Baldenegro-Perez; Husam N. Alshareef; Martin A. Hernández-Landaverde

doi:10.4028/www.scientific.net/MSF.644.113

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HomeMaterials Science ForumMaterials Science Forum Vol. 644Structural and Morphological Properties of...

Structural and Morphological Properties of Hf_xZr_1-xO₂ Thin Films Prepared by Pechini Route

Abstract:

In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm.

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Periodical:

Materials Science Forum (Volume 644)

Pages:

113-116

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.644.113

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Online since:

March 2010

Authors:

L.A. García-Cerda, Bertha A. Puente Urbina, M.A. Quevedo-López, B.E. Gnade, Leo A. Baldenegro-Perez, Husam N. Alshareef, Martin A. Hernández-Landaverde

Keywords:

Dielectric Material, Hafnium Oxide, Pechini Route, Thin Film, Zirconium Oxide

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