Structural and Morphological Properties of HfxZr1-xO2 Thin Films Prepared by Pechini Route

Abstract:

Article Preview

In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm.

Info:

Periodical:

Edited by:

Arturo Ponce and Darío Bueno

Pages:

113-116

DOI:

10.4028/www.scientific.net/MSF.644.113

Citation:

L.A. García-Cerda et al., "Structural and Morphological Properties of HfxZr1-xO2 Thin Films Prepared by Pechini Route", Materials Science Forum, Vol. 644, pp. 113-116, 2010

Online since:

March 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.