Formation of Si Nanocrystals in Thin SiO2 Films for Memory Device Applications
X-ray Diffraction and Reflectivity, Transmission Electron Microscopy and Atomic Force Microscopy were applied to study the effect of thermal annealing on the properties of thin SiOx films (~ 15 nm) prepared by thermal evaporation of SiO in vacuum. It has been shown that furnace annealing at 1000 oC causes phase separation and formation of uniformly distributed Si nanocrystals into a SiO2 matrix. Clockwise hysteresis has been observed in the C-V curves measured and explained by assuming charging and discharging of the NCs with carriers, which tunnel from the Si substrate.
Arturo Ponce and Darío Bueno
M. Curiel et al., "Formation of Si Nanocrystals in Thin SiO2 Films for Memory Device Applications", Materials Science Forum, Vol. 644, pp. 101-104, 2010