Formation of Si Nanocrystals in Thin SiO2 Films for Memory Device Applications

Mario Curiel; Ivan Petrov; Nicola Nedev; Diana Nesheva; Mauro R. Sardela; Yuya Murata; Benjamin Valdez; Emil Manolov; Irina Bineva

doi:10.4028/www.scientific.net/MSF.644.101

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HomeMaterials Science ForumMaterials Science Forum Vol. 644Formation of Si Nanocrystals in Thin SiO2 Films...

Formation of Si Nanocrystals in Thin SiO₂ Films for Memory Device Applications

Abstract:

X-ray Diffraction and Reflectivity, Transmission Electron Microscopy and Atomic Force Microscopy were applied to study the effect of thermal annealing on the properties of thin SiOx films (~ 15 nm) prepared by thermal evaporation of SiO in vacuum. It has been shown that furnace annealing at 1000 oC causes phase separation and formation of uniformly distributed Si nanocrystals into a SiO2 matrix. Clockwise hysteresis has been observed in the C-V curves measured and explained by assuming charging and discharging of the NCs with carriers, which tunnel from the Si substrate.

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Periodical:

Materials Science Forum (Volume 644)

Pages:

101-104

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.644.101

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Online since:

March 2010

Authors:

Mario Curiel, Ivan Petrov, Nicola Nedev, Diana Nesheva, Mauro R. Sardela, Yuya Murata, Benjamin Valdez, Emil Manolov, Irina Bineva

Keywords:

Atomic Force Microscope (AFM), Si Nanocrystal, SiO_x, TEM

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References

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