Formation of Si Nanocrystals in Thin SiO2 Films for Memory Device Applications

Abstract:

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X-ray Diffraction and Reflectivity, Transmission Electron Microscopy and Atomic Force Microscopy were applied to study the effect of thermal annealing on the properties of thin SiOx films (~ 15 nm) prepared by thermal evaporation of SiO in vacuum. It has been shown that furnace annealing at 1000 oC causes phase separation and formation of uniformly distributed Si nanocrystals into a SiO2 matrix. Clockwise hysteresis has been observed in the C-V curves measured and explained by assuming charging and discharging of the NCs with carriers, which tunnel from the Si substrate.

Info:

Periodical:

Edited by:

Arturo Ponce and Darío Bueno

Pages:

101-104

DOI:

10.4028/www.scientific.net/MSF.644.101

Citation:

M. Curiel et al., "Formation of Si Nanocrystals in Thin SiO2 Films for Memory Device Applications", Materials Science Forum, Vol. 644, pp. 101-104, 2010

Online since:

March 2010

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Price:

$35.00

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