The Electrical Characterization of Single ZnO Nanowries Field-Effect Transistors
The electrical properties of single ZnO nanowire were researched in the chamber of a scanning electron microscope under high-vacuum conditions using nanomanipulator and measurement system. The result shows that ZnO nanowire resistivity was about 1.4 Ω•cm with Ohmic contact. The local change of electron density induced by Shottky contacts or Ohmic contact with tip and semiconductor/metal materials significantly affects the current transport through the nanowire. Single ZnO nanowire was configured as field effect transistors (FET) and based on metal tantalum (Ta) as electrodes show a pronounced n-type gate modulation with an electron concentration of ~1.0×1019 cm−3 and an electron mobility of ~52 cm2 /V s at a bias voltage of 1 V.
Jian-Feng Nie and Allan Morton
H. F. Li et al., "The Electrical Characterization of Single ZnO Nanowries Field-Effect Transistors", Materials Science Forum, Vols. 654-656, pp. 1178-1181, 2010