Raman Scattering Studies in Oxygen-Vacancy Induced Ferromagnetism of Co-Doped ZnO Films

Shi Jian Chen; Kiyonori Suzuki

doi:10.4028/www.scientific.net/MSF.654-656.1844

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Multilayered Approach to Step-Edge Josephson Junctions
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Deposition of Superconducting Thin Films of Magnesium Di-Boride on Various Substrates by Electroless Plating Process
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HomeMaterials Science ForumMaterials Science Forum Vols. 654-656Raman Scattering Studies in Oxygen-Vacancy Induced...

Raman Scattering Studies in Oxygen-Vacancy Induced Ferromagnetism of Co-Doped ZnO Films

Abstract:

Zn1-xCoxO thin films ( ) have been grown on Si (100) substrates by pulsed laser deposition. The as-prepared films showed paramagnetic characteristics at room temperature, while the films after annealing in a H2 atmosphere exhibited clear ferromagnetic behaviors. Raman scattering has been used to study the influence of the post-deposition H2 annealing on the structural properties and consequently on the magnetic properties of Co-doped ZnO films. It is found that the post-deposition annealing increases defect oxygen vacancies in the host lattice and induces an additional Raman vibration mode. The ferromagnetism of Zn1-xCoxO is believed to be strongly related to the oxygen deficiency in ZnO.

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Materials Science Forum (Volumes 654-656)

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1844-1847

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https://doi.org/10.4028/www.scientific.net/MSF.654-656.1844

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June 2010

Authors:

Shi Jian Chen, Kiyonori Suzuki

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Raman Spectroscopy, Room-Temperature Ferromagnetism, ZnO Film

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