Raman Scattering Studies in Oxygen-Vacancy Induced Ferromagnetism of Co-Doped ZnO Films

Abstract:

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Zn1-xCoxO thin films ( ) have been grown on Si (100) substrates by pulsed laser deposition. The as-prepared films showed paramagnetic characteristics at room temperature, while the films after annealing in a H2 atmosphere exhibited clear ferromagnetic behaviors. Raman scattering has been used to study the influence of the post-deposition H2 annealing on the structural properties and consequently on the magnetic properties of Co-doped ZnO films. It is found that the post-deposition annealing increases defect oxygen vacancies in the host lattice and induces an additional Raman vibration mode. The ferromagnetism of Zn1-xCoxO is believed to be strongly related to the oxygen deficiency in ZnO.

Info:

Periodical:

Materials Science Forum (Volumes 654-656)

Main Theme:

Edited by:

Jian-Feng Nie and Allan Morton

Pages:

1844-1847

DOI:

10.4028/www.scientific.net/MSF.654-656.1844

Citation:

S. J. Chen and K. Suzuki, "Raman Scattering Studies in Oxygen-Vacancy Induced Ferromagnetism of Co-Doped ZnO Films", Materials Science Forum, Vols. 654-656, pp. 1844-1847, 2010

Online since:

June 2010

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$35.00

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