Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature

Abstract:

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Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

1041-1044

DOI:

10.4028/www.scientific.net/MSF.663-665.1041

Citation:

H. F. Liu and H. F. Zhang, "Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature", Materials Science Forum, Vols. 663-665, pp. 1041-1044, 2011

Online since:

November 2010

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$35.00

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