Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature
Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm.
Yuan Ming Huang
H. F. Liu and H. F. Zhang, "Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature", Materials Science Forum, Vols. 663-665, pp. 1041-1044, 2011