Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature

Han Fa Liu; Hua Fu Zhang

doi:10.4028/www.scientific.net/MSF.663-665.1041

Paper Titles

Synthesis of Plate-Like SrTiO₃ Particles
p.1024

Low Temperature Sintering of (Ca_0.9375Sr_0.0625)_0.25(Li_0.5Sm_0.5)_0.75TiO₃ Microwave Dielectric Ceramics
p.1028

Electrochemically Deposited Aluminum in Template of Porous Silicon Film
p.1032

Structural Transition and Magnetic Properties of (Sr_2-3xLa_2xBa_x)FeMoO₆
p.1036

Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature
p.1041

Influence of the Sputtering Pressure on the Properties of TAZO Films Prepared by DC Magnetron Sputtering
p.1045

Triply-Responsive Poly(N,N-Dimethylaminoethyl Mathacrylate) with an Azobenzene Moiety
p.1049

Wet-Chemical Processing and Angle-Dependent Optical Properties Characterization of Mica/TiO₂/Al₂O₃/M₂O₃ (M = Fe, Cr, Co) Pigments
p.1053

Synthesis and Characterization of D-Galactopyranose-Containing Amphiphilic Block Copolymers via ATRP
p.1057

HomeMaterials Science ForumMaterials Science Forum Vols. 663-665Transparent Conducting TGZO Thin Films Deposited...

Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature

Abstract:

Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm.