Codoping Effects and Electrical Properties in Sol-Gel Li-Al Doped Zinc Oxide

Abstract:

Li and Al codoped ZnO (LAZO) thin films have been prepared by sol-gel method. The electrical and structural properties of the LAZO films have been investigated. X-ray diffraction (XRD) results showed that the prepared LAZO films had a polycrystalline hexagonal wurtzite structure. X-ray photoelectron spectrometer (XPS) measurements indicated that our sol-gel prepared films were of high purity and codoped with Li and Al evidenced by peaks centered at 74.1 and 55.6 eV. The resulting LAZO films were p-type, and had a low resistivity in the range of 10-3~100 Ωcm, and high carrier concentration in the range of 1014~1018 cm-3.

• Periodical: Materials Science Forum (Volumes 663-665)
• Pages: 546-550
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.663-665.546
• Online since: November 2010
• Authors: Hong En Nian, Eui Jung Kim, Yuan Zhou, Xiu Feng Ren, Yu Na Pang, Hong Bin Wang
• Keywords: Co-Doping, Electrical Properties, Sol-Gel Method, Zinc Oxide (ZnO)

References

[1] C. R. Goria, N.W. Emanetoglu, S. Liang, W.E. Mayo, Y. Lu, M. Wraback and H. Shen: J. Appl. Phys. Vol. 85 (1999), p.2595.

[2] J. Hu and R.G. Gordon: Solar Cells Vol. 30 (1991), p.437.

[3] P. Nunes, E. Fortunato, P. Tonello, F. Braz, P. Vilarinho and R. Martins: Vacuum. Vol. 64 (2002), p.281.

[4] Y. Morinaga, K. Sakuragi, N. Fujimura and T. Ito: J. Cryst. Growth Vol. 174 (1997), p.691.

[5] A. Tiburcio-Silver, J.C. Joubert and M. Laveau: Thin Solid Films Vol. 197 (1991), p.195.

[6] D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Eason and G. Cantwell: Appl. Phys. Lett. Vol. 81 (2002), p.1830.

[7] Z. Z. Ye, J.G. Lu, H.H. Chen, Y.Z. Zhang, L. Wang, B.H. Zhao and J.Y. Huang: J. Cryst. Growth. Vol. 253 (2003), p.258.

[8] W. Z. Xu, Z.Z. Ye, T. Zhou, B.H. Zhao, L.P. Zhu and J.Y. Huang: J. Cryst. Growth. Vol. 265 (2004), p.133.

[9] K.K. Kim, H.S. Kim, D.K. Hwang, J.H. Lim, and S.J. Park, Appl. Phys. Lett. Vol. 83 (2003), p.63.

[10] F.G. Chen, Z.Z. Ye, W.Z. Xu, B.H. Zhao, L.P. Zhu, and J.G. Lu: J. Cryst. Growth. Vol. 281 (2005), p.458.

[11] Y. R. Ryu, S. Zhu, D.C. Look, J.M. Wrobel, H.M. Jeong and H.W. White: J. Cryst. Growth. Vol. 216 (2000), p.330.

[12] F.X. Xiu, Z. Yang, L.J. Mandalapu, D.T. Zhao and J.L. Liu: Appl. Phys. Lett. Vol. 87 (2005), p.152101.

[13] J.G. Lu, Y.Z. Zhang, Z.Z. Ye, Y.J. Zeng, H.P. He, L.P. Zhu, J.Y. Huang, L. Wang, J. Yuan, B.H. Zhao and X.H. Li: Appl. Phys. Lett. Vol. 89 (2006), p.112113.

[14] J.G. Lu, Y.Z. Zhang, Z.Z. Ye, L.P. Zhu, L. Wang, B.H. Zhao, Q.L. Liang: Appl. Phys. Lett. Vol. 88 (2006), p.222114.

[15] X.H. Wang, B. Yao, Z.P. Wei, D.Z. Shen, Z.Z. Zhang, B.H. Li, Y.M. Lu, D.X. Zhao, J.Y. Zhang, X.W. Fan, L.X. Guan, and C.X. Cong: J. Phys. D: Appl. Phys. Vol. 39 (2006), p.4568.

[16] A. Krtschil, A. Dadgar, N. Oleynik, J. Bla¨sing, A. Diez and A. Krost: Appl. Phys. Lett. Vol. 87 (2005), p.262105.

DOI: 10.1063/1.2149171

[17] H. Nian, S.H. Hahn, K. -K. Koo, J.S. Kim, S. Kim, E.W. Shin and E.J. Kim : Mater. Lett. Vol. 64 (2010), p.157.

[18] R. E. Shrader and H. W. Leverenz, J. Opt. Soc. Am. Vol. 37 (1947), p.939.

[19] R. Cebulla, R. Werndt, and K. Ellmer, J. Appl. Phys. Vol. 83 (1998), p.1087.

[20] L. K. Rao and V. Vinni, Appl. Phys. Lett. Vol. 63 (1993), p.608.

[21] K. C. Park, D. Y. Ma, K. H. Kim, Thin Solid Films. Vol. 305 (1997), p.201.

[22] Q. -H. Wu, A. Thissen, W. Jaegermann: Appl. Surf. Sci. Vol. 250 (2005), p.57.

[23] X.H. Wang, B. Yao, Z.P. Wei, D.Z. Shen, Z.Z. Zhang, B.H. Li, Y.M. Lu, D.X. Zhao, J.Y. Zhang, X.W. Fan, L.X. Guan, C.X. Cong: J, Phys. D: Appl. Phys. Vol. 39 (2006), p.4568.

[24] C. H. Park, S. B. Zhang and S. -H. Wei: Phys. Rev. B Vol. 66 (2002), p.073202.

[25] T. Yamamoto and H. Katayama-Yoshida: J. Cryst. Growth. Vol. 214/215 (2000), p.552.

[26] Y. Yamamoto: Jpn. J. Appl. Phys., Part 1 42, (2003), p.514.

[27] M. G. Wardle, J. P. Goss and P. R. Briddon: Phys. Rev. B Vol. 71 (2005), 155205.