Microstructure and Electric Transport Characteristic of Microcrystalline Silicon Films Fabricated by Very High Frequency Plasma Enhanced Chemical Vapor Deposition

Xiang Wang; Rui Huang; Jie Song; Yan Qing Guo; Chao Song; Yi Xiong Zhang

doi:10.4028/www.scientific.net/MSF.663-665.600

Paper Titles

Preparation and Properties of Polyimide/SiO₂ Hollow Spheres Composite Films with Good Dielectric Property and Amazing XRD Spectra
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Effects of Different Metal-Molecule Interface Conformations on the Electronic Transport in Molecular Junctions
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First Principles Investigation of Geometrical and Electronic Structure of Semiconductor Fe_1-XCo_xSi₂
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Effect of LaCoO₃ Additive on the Electrochemical Behavior of Zinc Anode in Alkaline Solution
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Microstructure and Electric Transport Characteristic of Microcrystalline Silicon Films Fabricated by Very High Frequency Plasma Enhanced Chemical Vapor Deposition
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Theoretical Investigation on the Electron Transport through Single Alkandithiol Molecules under Different Compression
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Effect of Li₂CO₃-V₂O₅ on the Sintering and Microwave Dielectric Properties of 0.6Mg₄Nb₂O₉-0.4SrTiO₃ Composite Ceramics
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Study on the Energy Structure of Amorphous Antireflection Er₂O₃ Films on Si(001) Substrates
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First-Principles Study of Electron Transport Behavior through Porphyrin Molecular Wires
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HomeMaterials Science ForumMaterials Science Forum Vols. 663-665Microstructure and Electric Transport...

Microstructure and Electric Transport Characteristic of Microcrystalline Silicon Films Fabricated by Very High Frequency Plasma Enhanced Chemical Vapor Deposition

Abstract:

Microcrystalline silicon (μc-Si:H) film deposited on silicon oxide in a very high frequency plasma enhanced chemical vapor deposition with highly H2 dilution of SiH4 has been investigated by Raman spectroscopy and high resolution transmission electron microscopy. Raman spectroscopy results show that the crystalline volume fraction increases with increasing the hydrogen flow rate and for the hydrogen flow rate of 160 sccm, the crystalline volume fraction reaches to 67.5%. Nearly parallel columnar structures with complex microstructure are found from cross-sectional transmission electron microscopy images of the film. The temperature depend dark conductivity and activation energy are studied in order to investigate the electronic transport processes in the nc-Si films.