Highly Textured (111) Pt Substrates for Preferred Orientation Controlled AlN Films

Takashi Harumoto; Shinji Muraishi; Ji Shi; Yoshio Nakamura

doi:10.4028/www.scientific.net/MSF.675-677.1259

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HomeMaterials Science ForumMaterials Science Forum Vols. 675-677Highly Textured (111) Pt Substrates for Preferred...

Highly Textured (111) Pt Substrates for Preferred Orientation Controlled AlN Films

Abstract:

Preferred orientation of AlN films has been improved to c-axis using a highly (111) textured Pt layer. The highly textured (111) Pt layer is obtained by inserting an AlN layer between the Pt layer and substrate. Thus, Pt/AlN/substrate could be termed a substrate for preferred orientation controlled AlN films. X-ray diffraction (XRD) profiles reveal that the degree of preferred orientation of such highly (111) textured Pt layer surpasses the one originated from the crystal structure of Pt. The (2θ, ψ) intensify maps of diffracted X-ray collected as a function of the diffraction angle (2θ) and the tilting angle (ψ) exhibit that the films are perfectly (111) preferred orientated, however, they do not show in-plane texture. The (2θ, ψ) maps also demonstrate that a residual stress in films is subject to compressive.

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Materials Science Forum (Volumes 675-677)

Pages:

1259-1262

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.675-677.1259

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Online since:

February 2011

Authors:

Takashi Harumoto, Shinji Muraishi, Ji Shi, Yoshio Nakamura

Keywords:

Aluminum Nitride (AlN), BAW, C-Axis, Preferred Orientation, Reactive Sputtering, Underlayer

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