Synthesis and Application of Electronic Transporting Materials
p.179
p.179
Synthesis and Properties of Diphenylquinoxaline as Electron-Transporting Materials
p.183
p.183
Synthesis of Bi2O3- B2O3- SiO2- ZnO Glass and their Effects on the Sintering Temperature and Magnetoelectric Properties of Co / Ti Doped M-Type Barium Ferrite
p.189
p.189
The Band Structure and Electronic Density of States of Thermoelectric Co-Doped Magnesium Silicide
p.194
p.194
The Effect CuO Additive on the Microwave Dielectric Properties of Mg(Zr0.05Ti0.95)O3 Ceramics
p.199
p.199
The Effect of Sb Content on Spark Plasma Sintered High-Density Antimony-Doped Tin Oxide Ceramics
p.204
p.204
The Improvement of Performance of HfO2/Gd2O3/Si Stack Compared with Gd-Doped HfO2 High-K Films
p.209
p.209
Thermal Analysis of High Power Light Emitting Diodes Package
p.215
p.215
Unification of the Charge Transport in Field-Effect Transistors and Light-Emitting Diodes Based on Organic Semiconductors
p.222
p.222
The Effect CuO Additive on the Microwave Dielectric Properties of Mg(Zr0.05Ti0.95)O3 Ceramics
Abstract:
The microwave dielectric properties of the Mg(Zr0.05Ti0.95)O3 ceramics with CuO addition were investigated. All specimens were prepared by solid-state reaction method and sintered at 1270-1420°C for 4 h. When CuO was added, the second phases of MgTi2O5, TiO2 and liquid phase were produced. For specimens with 1.5 wt% CuO sintered at 1300°C, the dielectric constant, Q´f and tf values are 18.2, 223000 GHz and -2 ppm/°C, respectively.
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Periodical:
Materials Science Forum (Volume 687)
Pages:
199-203
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Online since:
June 2011
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© 2011 Trans Tech Publications Ltd. All Rights Reserved
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