Thermal Analysis of High Power Light Emitting Diodes Package

Abstract:

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With increasing of the input power of the chips in light emitting diode (LED), the thermal accumulation of LEDs package increases. Therefore solving the heat issue has become a precondition of high power LED application. In this paper, finite element method was used to analyze the thermal field of high power LEDs. The effect of the heatsink structure on the junction temperature was also investigated. The results show that the temperature of the chip is 95.8°C which is the highest, and it meets the requirement. The conductivity of each component affects the thermal resistance. Convective heat exchange is connected with the heat dissipation area. In the original structure of LEDs package the heat convected through the substrate is the highest, accounting for 92.58%. Three heatsinks with fin structure are designed to decrease the junction temperature of the LEDs package.

Info:

Periodical:

Edited by:

Chengming Li, Chengbao Jiang, Zhiyong Zhong and Yichun Zhou

Pages:

215-221

DOI:

10.4028/www.scientific.net/MSF.687.215

Citation:

Y. Y. Han et al., "Thermal Analysis of High Power Light Emitting Diodes Package", Materials Science Forum, Vol. 687, pp. 215-221, 2011

Online since:

June 2011

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$35.00

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