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Thermal Analysis of High Power Light Emitting Diodes Package

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Abstract:

With increasing of the input power of the chips in light emitting diode (LED)， the thermal accumulation of LEDs package increases. Therefore solving the heat issue has become a precondition of high power LED application. In this paper, finite element method was used to analyze the thermal field of high power LEDs. The effect of the heatsink structure on the junction temperature was also investigated. The results show that the temperature of the chip is 95.8°C which is the highest, and it meets the requirement. The conductivity of each component affects the thermal resistance. Convective heat exchange is connected with the heat dissipation area. In the original structure of LEDs package the heat convected through the substrate is the highest, accounting for 92.58%. Three heatsinks with fin structure are designed to decrease the junction temperature of the LEDs package.

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Periodical:

Materials Science Forum (Volume 687)

Pages:

215-221

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.687.215

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Online since:

June 2011

Authors:

Yuan Yuan Han, Hong Guo, Xi Min Zhang, Fa Zhang Yin, Ke Chu, Ou Yang Yao

Keywords:

Finite Element Analysis (FEA), Heatsink Structure, High Power LEDs Package, Junction Temperature

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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