Paper Titles

Preface and Organizing Commitee

A HRTEM Study of Resistive Switching Behaviour in SiO₂ Thin Films by Sol-Gel Process
p.1

Ab Initio Study on Hexagonal Ge₂Sb₂Te₅-A Phase-Change Material for Nonvolatile Memories
p.7

Absorption Peaks Study of β-Zn₃BPO₇ Crystal in THz Band
p.12

Comparison of Wettability for Sn-Based Solders on Copper and Aluminum Substrates
p.15

Effect of Composite Additives on ZnO Varistor Ceramics
p.21

Effect of P on the Anti-Oxidation of SnPb Solder and the Mechanism Research
p.26

Effect of Pr on the Microstructure and Electrical Properties of Ta-Doped TiO₂ Capacitor-Varistor Ceramics
p.34

Effect of RE on Creep Rupture Life of SnAgCu Solder Joints
p.39

HomeMaterials Science ForumMaterials Science Forum Vol. 687Ab Initio Study on Hexagonal Ge2Sb2Te5-A...

Ab Initio Study on Hexagonal Ge₂Sb₂Te₅-A Phase-Change Material for Nonvolatile Memories

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Abstract:

On the basis of ab initio total energy calculations, we have performed an extensive study on the stacking sequence and random occupation of Ge and Sb to make the same layer in stable hexagonal Ge₂Sb₂Te₅ (h-GST), an excellent candidate for phase change random memory applications. The results demonstrate that the atomic arrangements have great effects on lattice parameter c and electronic properties of h-GST. h-GST changes from semiconductor to metallic behavior as varying the atomic sequence.

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Functional and Electronic Materials, IUMRS-ICA2010

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Periodical:

Materials Science Forum (Volume 687)

Pages:

7-11

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.687.7

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Online since:

June 2011

Authors:

Zhi Mei Sun, Yuan Chun Pan, Bai Sheng Sa, Jian Zhou

Keywords:

Atomic Arrangement, First-Principle, Phase Change Materials (PCM)

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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