Ab Initio Study on Hexagonal Ge2Sb2Te5-A Phase-Change Material for Nonvolatile Memories
On the basis of ab initio total energy calculations, we have performed an extensive study on the stacking sequence and random occupation of Ge and Sb to make the same layer in stable hexagonal Ge2Sb2Te5 (h-GST), an excellent candidate for phase change random memory applications. The results demonstrate that the atomic arrangements have great effects on lattice parameter c and electronic properties of h-GST. h-GST changes from semiconductor to metallic behavior as varying the atomic sequence.
Chengming Li, Chengbao Jiang, Zhiyong Zhong and Yichun Zhou
Z. M. Sun et al., "Ab Initio Study on Hexagonal Ge2Sb2Te5-A Phase-Change Material for Nonvolatile Memories", Materials Science Forum, Vol. 687, pp. 7-11, 2011