A HRTEM Study of Resistive Switching Behaviour in SiO2 Thin Films by Sol-Gel Process

Ying Li; Gao Yang Zhao; Xiao Fei Zhou; Li Ning Pan; Yang Ren

doi:10.4028/www.scientific.net/MSF.687.1

Paper Titles

Preface and Organizing Commitee

A HRTEM Study of Resistive Switching Behaviour in SiO₂ Thin Films by Sol-Gel Process
p.1

Ab Initio Study on Hexagonal Ge₂Sb₂Te₅-A Phase-Change Material for Nonvolatile Memories
p.7

Absorption Peaks Study of β-Zn₃BPO₇ Crystal in THz Band
p.12

Comparison of Wettability for Sn-Based Solders on Copper and Aluminum Substrates
p.15

Effect of Composite Additives on ZnO Varistor Ceramics
p.21

Effect of P on the Anti-Oxidation of SnPb Solder and the Mechanism Research
p.26

Effect of Pr on the Microstructure and Electrical Properties of Ta-Doped TiO₂ Capacitor-Varistor Ceramics
p.34

Effect of RE on Creep Rupture Life of SnAgCu Solder Joints
p.39

HomeMaterials Science ForumMaterials Science Forum Vol. 687A HRTEM Study of Resistive Switching Behaviour in...

A HRTEM Study of Resistive Switching Behaviour in SiO₂ Thin Films by Sol-Gel Process

Abstract:

Amorphous SiO2 thin films were fabricated at different temperatures using sol-gel technique. The unipolar resistive switching behavior was observed in Cu/ SiO2/ ATO (SnO2: Sb) sandwiched structure when the SiO2 thin film annealed at 500°C. The average ratio of Roff /Ron is 102. We investigated the successful device using HRTEM and XPS. It shows that the Cu defuses into the SiO2 thin film and it forms CuSiO3 in the interface between SiO2 and ATO films according to the high resolution images.

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Materials Science Forum (Volume 687)

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1-6

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https://doi.org/10.4028/www.scientific.net/MSF.687.1

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Online since:

June 2011

Authors:

Ying Li, Gao Yang Zhao, Xiao Fei Zhou, Li Ning Pan, Yang Ren

Keywords:

HRTEM, Resistive Switching, SiO₂, Sol-Gel (SG)

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