Electrical and Optical Properties of ZnO-Doped Zr_0.8Sn_0.2TiO₄ Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

Abstract:

Electrical and optical properties of 1wt% ZnO-doped (Zr_0.8Sn_0.2)TiO₄ thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

• Periodical: Materials Science Forum (Volume 687)
• Pages: 70-74
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.687.70
• Online since: June 2011
• Authors: Cheng Hsing Hsu, His Wen Yang, Jenn Sen Lin
• Keywords: Dielectric, RF Magnetron Sputtering, ZnO-Doped Zr_0.8Sn_0.2TiO₄ Thin Film

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